Zobrazeno 1 - 10
of 27
pro vyhledávání: '"V. V. Mamedov"'
Autor:
B. M. Ataev, G. A. Onushkin, S. Sh. Makhmudov, Ya. I. Alivov, V. V. Mamedov, E.V. Kalinina, A. K. Omaev
Publikováno v:
Journal of Crystal Growth. 275:e2471-e2474
We report on the first results of n-ZnO/p-SiC heterostructures fabrication by chemical vapor deposition in the low-pressure system. The structural and luminescence properties of these structures are studied.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e55cdd05adc1c08e166d40ec882805c
https://doi.org/10.1016/j.jcrysgro.2004.11.379
https://doi.org/10.1016/j.jcrysgro.2004.11.379
Autor:
V. V. Mamedov, David C. Look, M. V. Chukichev, Ya. I. Alivov, A.N. Pustovit, V. I. Zinenko, Yu.A. Agafonov, B. M. Ataev
Publikováno v:
Solid-State Electronics. 48:2343-2346
A ZnO-based metal–insulator–semiconductor junction has been fabricated using an isolation layer fabricated by N+ ion implantation. I–V dependences show a good rectifying diode-like behavior with a low leakage current of 10−6 A and a threshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f415ebcf5f4076e7957d71d2df79b4a0
https://doi.org/10.1016/j.sse.2004.05.063
https://doi.org/10.1016/j.sse.2004.05.063
Cathodoluminescence of ZnO/GaN/α-Al2O3 heteroepitaxial structures grown by chemical vapor deposition
Publikováno v:
Semiconductors. 36:977-980
The cathodoluminescent properties of ZnO films in ZnO/GaN/α-Al2O3 and ZnO/α-Al2O3 heteroepitaxial structures grown by chemical vapor deposition in a low-pressure flowing-gas reactor were studied and compared. A superlinear dependence of the exciton
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fe0d045e83b20019e8f1eaf23fe30e1
https://doi.org/10.1134/1.1507276
https://doi.org/10.1134/1.1507276
Publikováno v:
Journal of Physics: Condensed Matter. 13:L211-L214
We present the first results on (0001) ZnO/(0001) epi-GaN/(0001) ?-Al2O3 heterostructure fabrication combining metal-organic vapour phase epitaxy and low-pressure chemical vapour deposition methods. The surface morphologies of the films were studied,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29a4dd47285a4de90185d811ef1b417f
https://doi.org/10.1088/0953-8984/13/9/103
https://doi.org/10.1088/0953-8984/13/9/103
Autor:
V. V. Mamedov, Sh. M. Aliev, M. Sh. Aliev, S.M. Kallaev, Sh. O. Shakhshaev, M.M. Guseynov, I. K. Kamilov
Publikováno v:
Journal of Magnetism and Magnetic Materials. 322:424-426
The determination technique of monodomain state of the magnetic powder particles using the Mossbauer spectroscopy is described. The method was verified on the particles of gadolinium iron garnet near the compensation temperature. It has also shown th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67b192898f7c4cbd9a82409640d667aa
https://doi.org/10.1016/j.jmmm.2009.09.070
https://doi.org/10.1016/j.jmmm.2009.09.070
Publikováno v:
Technical Physics Letters. 36:34-36
Arrays of zinc oxide (ZnO) nanowhskers oriented perpendicularly to the surface of a substrate have been obtained by explosive laser evaporation of ZnO target on (0001)-oriented sapphire and unoriented silica, glass ceramic composite (Polycor), and gl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::981bce1869446eeaa3e8def1e2b68f50
https://doi.org/10.1134/s1063785010010116
https://doi.org/10.1134/s1063785010010116
Publikováno v:
Inorganic Materials. 36:219-222
High-conductivity, transparent zinc oxide epilayers doped with In and Ga (0.1–2 wt %) were grown by chemical vapor transport in a reduced-pressure flow reactor. Their electrical and optical properties were studied.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c8c99146bb134a3275a1412a4fdf99b
https://doi.org/10.1007/bf02757924
https://doi.org/10.1007/bf02757924
Publikováno v:
Materials Science and Engineering: B. 65:159-163
It is possible to fabricate thin epitaxial ZnO layers doped in situ with In and Ga impurities by chemical vapor deposition (CVD) in a low-pressure system. Highly conductive and transparent ZnO:Me (0.1–2 wt.%) films are deposited on (1012) sapphire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5089786f6d8b903c5d48db761dd4aae7
https://doi.org/10.1016/s0921-5107(99)00166-x
https://doi.org/10.1016/s0921-5107(99)00166-x
Publikováno v:
Journal of Crystal Growth. :1222-1225
Sucessful preparation of ZnO : M epitaxial thin films (ETF) in situ doped with donor impurity M=Ga, Sn by chemical vapor despsition in a low-pressure system is reported. Highly conductive (up to 10 −4 Ω cm) and transparent ( T >85%) ZnO : M ETF ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fc4a48204fce8c609ff4aa7dc10ecf4
https://doi.org/10.1016/s0022-0248(98)01217-2
https://doi.org/10.1016/s0022-0248(98)01217-2
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 71:657-659
n-ZnO/p-A IIIN (A III = Ga, Al) heterojunctions have been fabricated, which exhibit relatively strong electroluminescence in the blue-violet spectral range under forward bias. It is shown that ZnO layers grown with rf-discharge activation have a less
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc1f81e0197a5be196930b8fd98a774f
https://doi.org/10.3103/s1062873807050176
https://doi.org/10.3103/s1062873807050176