Výsledky vyhledávání - "V. V. Mamaev"

High temperature ammonia MBE—Real way to improve crystal quality of nitride heterostructures

Autor: V. V. Mamaev, Evgenii V. Lutsenko, M. V. Rzheutski, A. N. Alexeev, S. I. Petrov, S.A. Novikov

Publikováno v: Journal of Crystal Growth. 514:40-44

It is shown that the use of high-temperature AlN/AlGaN buffer layers grown by NH3-MBE at extremely high temperatures (up to 1200 °C) allows one to improve drastically the structural quality of topmost GaN layer. The influence of an ammonia flow in t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ad5e850ab2fe413e044abd769c9f3ab6
https://doi.org/10.1016/j.jcrysgro.2019.02.047

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THE INFLUENCE OF CONDITIONS OF FORMATION OF HETEROSTRUCTURES BASED ON NITRIDES OF III GROUP, ON THE STRUCTURAL PERFECTION OF THE INSTRUMENT STRUCTURES FOR MICROWAVE TRANSISTORS, AND OPTOELECTRONIC DEVICES IN THE ULTRAVIOLET RANGE

Autor: Sergey Novikov, Sergey Zaycev, S. I. Petrov, V. V. Mamaev, Dmitriy Prohorenkov

Publikováno v: Bulletin of Belgorod State Technological University named after. V. G. Shukhov. 2:102-109

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c9d74a6f12444fdc1661c8ece60b0e08
https://doi.org/10.12737/article_5926a059824a22.24626416

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Study of the influence of ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures

Autor: A. N. Alexeev, S. I. Petrov, V. V. Mamaev

Publikováno v: Semiconductors. 51:1453-1455

The results of growing AlN buffer layers for transistors with a high electron mobility by high-temperature ammonia MBE using Ga as a surfactant are presented. The main parameters affecting the growth and defect formation kinetics are efficient flows

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::72732d83a80ffb8b332afaad12e05a3f
https://doi.org/10.1134/s1063782617110045

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III-Nitride advanced technologies and equipment for microelectronics

Autor: D. M. Krasovitsky, S. I. Petrov, V. V. Mamaev, V. P. Chaly, A. N. Alexeev

Publikováno v: SPIE Proceedings.

Using of complex equipment SemiTEq shown in example of a closed cycle of basic technological operations for production of high-power field microwave transistors based on gallium nitride in the "Svetlana-Rost" JSC. Basic technological operations are s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d0faaaa2ef94ecb8ff0f233f00016a69
https://doi.org/10.1117/12.2267146

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Specific features of NH3 and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures

Autor: V. V. Mamaev, D. M. Krasovitsky, S. I. Petrov, V. G. Sidorov, A. N. Alexeev, V. P. Chaly

Publikováno v: Semiconductors. 49:92-94

The specific features of how nitride HEMT heterostructures are produced by NH3 and plasma-assisted (PA) molecular-beam epitaxy (MBE) are considered. It is shown that the use of high-temperature AlN/AlGaN buffer layers grown with ammonia at extremely

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::336725ef0845dbfa318a231992de84e9
https://doi.org/10.1134/s1063782615010029

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Low Dislocation Density and High Mobility GaN Layers for DHFET Channels Grown on High-Temperature AlN/AlGaN Buffer Layer by Ammonia MBE

Autor: D. M. Krasovitsky, V. P. Chaly, A. N. Alexeev, V. V. Mamaev, S. I. Petrov

Publikováno v: Advanced Materials Research. 854:135-140

The growth of AlN buffer layer at extremely high temperature (1100-1150oC) in ammonia MBE STE3N2 system is shown to be the key step to obtain high quality GaN layers for DHFET channels. The buffer layer sequence from c-sapphire substrate involved AlN

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6ba82664f353a1474a49e67246731c05
https://doi.org/10.4028/www.scientific.net/amr.854.135

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Investigation of Photoluminescence, Stimulated Emission, Photoreflectance, and 2DEG Properties of Double Heterojunction AlGaN/GaN/AlGaN HEMT Heterostructures Grown by Ammonia MBE

Autor: N. P. Tarasuk, Ahmed Y. Alyamani, A. N. Alexeev, G. P. Yablonskii, I. E. Svitsiankou, S. I. Petrov, V. V. Mamaev, Evgenii V. Lutsenko, M. V. Rzheutski, A. G. Vainilovich

Publikováno v: physica status solidi (a). 215:1700602

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::572c30db749122aa36ca57fc0923ad26
https://doi.org/10.1002/pssa.201700602

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Features of ammonia and plasma assisted MBE growth for development and production of III-nitrides based heterostructures for advanced nanoelectronics

Autor: V. P. Chaly, A. N. Alexeev, S. I. Petrov, V. V. Mamaev, D. M. Krasovitsky

Publikováno v: 2014 24th International Crimean Conference Microwave & Telecommunication Technology.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::93e4f987f06db874c6d16f9122b684c9
https://doi.org/10.1109/crmico.2014.6959276

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Technology development for GaN based power microwave DHFET

Autor: S. I. Petrov, V. P. Chaly, D. M. Krasovitsky, V. V. Mamaev, A. N. Alexeev, V. G. Sidorov, N S Arcebashev

Publikováno v: Journal of Physics: Conference Series. 690:012042

Key issues of epitaxial growth of III-nitrides on mismatched substrates are analysed. Thick AlN "templates" grown at extremely high temperatures and transition layers allow to reduce the dislocation density down to the order of 108 cm-2.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c9a3ddde276dda38294aabe5d5ab4359
https://doi.org/10.1088/1742-6596/690/1/012042

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