Zobrazeno 1 - 10
of 10
pro vyhledávání: '"V. V. Lukyanitsa"'
Autor:
V. V. Lukyanitsa
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 7, Pp 36-40 (2019)
The influence of the magnetic field (MF) on the optical properties of distilled water was studied. The spectral dependences (300¸700 nm) of the optical density of water (D) at different times (doses) of the preliminary exposure by MF were measured.
Externí odkaz:
https://doaj.org/article/86d1820f19ec40a6888ed7d5afaf14af
Publikováno v:
Defect and Diffusion Forum. :543-550
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72acb276a72360d169a615f3ab68c696
https://doi.org/10.4028/www.scientific.net/ddf.103-105.543
https://doi.org/10.4028/www.scientific.net/ddf.103-105.543
Publikováno v:
Soviet Physics Journal. 33:982-985
Radiation-defect accumulation and annealing have been examined for nucleardoped silicon in relation to germanium doping level. Results have been obtained from the temperature dependence of the Hall coefficient at various stages in60Co gamma irradiati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::746f169c5b7d376104f00bb03e22e204
https://doi.org/10.1007/bf00895641
https://doi.org/10.1007/bf00895641
Publikováno v:
physica status solidi (a). 118:65-69
The formation of donor-type defects (T = 300 to 400 °c) is observed when annealing 60CO γ-ray irradiated dislocation-free float-zone n-Si (ϱ = 100 Ω cm). It is assumed that in the bulk of such crystals inclusions of interstitial type are present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc911f32bb2242c73a1cadd46d2b7669
https://doi.org/10.1002/pssa.2211180108
https://doi.org/10.1002/pssa.2211180108
Publikováno v:
Radiation Effects. 105:181-190
Reconstruction processes proceeding during annealing of radiation defects in60Co γ-ray-irradiated (T in≲50°C) n-type silicon (ρ=20 to 250 Ω cm) grown by the vacuum float-zone technique were investigated. The temperature dependences (80 to 400 K
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::797cc6103b3549ea72a9e2a6fd6c97a8
https://doi.org/10.1080/00337578808229945
https://doi.org/10.1080/00337578808229945
Autor:
P. F. Lvgakov, V. V. Lukyanitsa
Publikováno v:
Physica Status Solidi (a). 84:457-464
Rearrangement processes proceeding during annealing (Ta = 50 to 500 °C) of radiation defects in 60Co γ-ray-irradiated (Tirr ≦ 50 °C) n-Si crystals (ϱ = 100 to 600 Ωcm) grow-n by the vacuum float-zone technique are studied. The temperature depe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10df85f3adf4a635da28158d9a329a27
https://doi.org/10.1002/pssa.2210840215
https://doi.org/10.1002/pssa.2210840215
Publikováno v:
Physica Status Solidi (a). 108:143-148
The processes of radiation defect formation in n-type silicon are studied at various irradiation temperatures (Tirr = 20 to 400°C) during 640 MeV proton or 10 MeV electron bombardment. The results are obtained from the analysis of the temperature de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::466a1288d5fb204069d85721b2c3b94a
https://doi.org/10.1002/pssa.2211080112
https://doi.org/10.1002/pssa.2211080112
