Výsledky vyhledávání - "V. V. Krivetskiy"

Quantification of Si dopant in β-Ga2O3-based semiconductor gas sensors by total reflection X-ray fluorescence spectroscopy (TXRF)

Autor: D. G. Filatova, A. P. Bogdanova, V. V. Krivetskiy, T. N. Penkina, M. N. Rumyantseva

Publikováno v: Industrial laboratory. Diagnostics of materials. 88:5-9

Developing of chemical sensors is relevant for solving environmental problems of monitoring the atmosphere of cities and industrial zones. Semiconductor sensors based on metal oxides are a promising type of chemical gas sensors due to their high sens

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::51ac14cb0f2928b5acf5dc435516c64a
https://doi.org/10.26896/1028-6861-2022-88-8-5-9

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Study of the Sensitivity of Porous SnO2-Based Thick-Film Elements to the Hydrogen Concentration in Air

Autor: V. V. Amelichev, S. S. Generalov, A. V. Nikolaeva, S. A. Polomoshnov, V. A. Kovalev, A. M. Kovalev, V. V. Krivetskiy

Publikováno v: Semiconductors. 55:1063-1066

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b4b6c24292e1ed4988a630240dd7978d
https://doi.org/10.1134/s1063782621130030

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P2NG.29 - One step synthesis of Au loaded nanocrystalline SnO2 by flame spray pyrolysis technique and its stability as gas sensor material

Autor: V. V. Krivetskiy, K. Zamanskiy

Publikováno v: Proceedings IMCS 2018.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0c46165554482e8cb28ac6b9349ab35c
https://doi.org/10.5162/imcs2018/p2ng.29

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