Zobrazeno 1 - 7
of 7
pro vyhledávání: '"V. V. Krasovskii"'
Publikováno v:
Nauka i Tehnika, Vol 20, Iss 6, Pp 482-486 (2021)
Alloys of lead and tin telluride (PbxSn1–xTe) are materials with good thermoelectric properties, as well as semiconductors that can be used as long-wave infrared detectors. Polycrystalline telluride of PbxSn1–xTe (0.05 £ x £ 0.80) alloys has be
Externí odkaz:
https://doaj.org/article/9a0c3864b0cd427aa220ad83d6300dab
Enhancement of Photoluminescence Intensity in MOCVD-Grown GaAs/AlGaAs Quantum Wells by Hydrogenation
Publikováno v:
physica status solidi (b). 178:K57-K59
Publikováno v:
Journal of Engineering Physics. 48:740-751
The general requirements for methods of analyzing two-phase plasma flows are stated as follows: assure the necessary measurement accuracy and high resolution with respect to time and space; avoid perturbations of the plasma jets; and provide for suff
Publikováno v:
physica status solidi (b). 133:693-700
The influence is examined of growth conditions of heavily doped n-type semiconductors on the width and energy position of Gaussian-shape impurity band where non-equilibrium holes are localized. The energy levels of the impurity band are shown to be c
Publikováno v:
Physica Status Solidi (b). 91:71-81
The shape of near-band-edge luminescence spectrum is studied and a quantitative analysis of the Burstein-Moss shift in the three band approximation of Kane's theory is carried out. It is shown experimentally that with increasing electron concentratio
Autor:
V V, KRASOVSKII, A N, PROTOPOPOV
Publikováno v:
Pediatriia. 43
Autor:
V V, KRASOVSKII, A N, PROTOPOPOV
Publikováno v:
Pediatriia. 40