Zobrazeno 1 - 10
of 34
pro vyhledávání: '"V. V. Kolos"'
Autor:
Tran Van Trieu, I. Yu. Lovshenko, V. R. Stempitsky, K. V. Korsak, Tran Tuan Trung, Dao Dinh Ha, V. V. Kolos
Publikováno v:
Цифровая трансформация, Vol 29, Iss 1, Pp 72-80 (2023)
A comparative analysis of the characteristics of the main types of bolometers is indicated in the article. The constructive solution of an uncooled thermal detector of the bolometric type, formed using the technology of microelectromechanical systems
Externí odkaz:
https://doaj.org/article/6032fb1b2d2c4837b9e586875d8696dd
Autor:
N. S. Kovalchuk, A. A. Omelchenko, V. A. Pilipenko, V. A. Solodukha, S. V. Demidovich, V. V. Kolos, V. A. Filipenia, D. V. Shestovski
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 20, Iss 4, Pp 44-52 (2022)
Researches of the electrophysical characteristics of gate dielectrics obtained by the rapid thermal processing (RTP) method by two-stage and three-stage processes have been carried out. Each photonic processing (stage) was carried out for 12 s at a c
Externí odkaz:
https://doaj.org/article/48887c34cb924b83b6081a75eee0cb91
Autor:
T. D. Nguyen, A. I. Zanko, D. A. Golosov, S. M. Zavadski, S. N. Melnikov, V. V. Kolos, N. К. Тоlochko
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 19, Iss 4, Pp 85-93 (2021)
The processes of reactive magnetron sputtering of a V target in Ar/O2 gas mixture are investigated. It was found that when using a pulsed current for sputtering and a pressure in the chamber less than 0.06 Pa, the intensities of the emission lines of
Externí odkaz:
https://doaj.org/article/8c672d6deeee442aaa95b3e6d0d64c43
Autor:
T. D. Nguen, A. I. Zanko, D. A. Golosov, S. M. Zavadski, S. N. Melnikov, V. V. Kolos, T. Q. To
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 19, Iss 3, Pp 22-30 (2021)
The aim of this work was to study the effect of the parameters of deposition process and subsequent annealing on the properties of vanadium oxide VOx films deposited by the pulsed reactive magnetron sputtering of a V target in an Ar/O2 gas mixture. T
Externí odkaz:
https://doaj.org/article/c83aa6f435e64d3490b0dbf5ffdb71d3
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 6, Pp 94-102 (2020)
The aim of this work was to study the effect of the gas composition during sputtering on the electrophysical properties of vanadium oxide films deposited by pulsed reactive magnetron sputtering of a vanadium target in an Ar/O2 medium of working gases
Externí odkaz:
https://doaj.org/article/204e18fb4806446e953a58a79a4b2bf7
Autor:
P. A. Kholov, N. V. Gaponenko, K. V. Shaidakova, V. I. Krymski, V. A. Filipenya, T. V. Petlitskaya, V. V. Kolos, A N. Pyatlitski
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 1, Pp 74-80 (2020)
The objective of the work is investigation the dielectric permittivity and dielectric loss tangent of BaTiO3 films in a capacitor structure formed by sol – gel method on a Si/TiOx/Pt substrate. The basis of this capacitor is a four-layer film of ba
Externí odkaz:
https://doaj.org/article/96b1f395a79e44028a37d912887eb71d
Autor:
A. H. Sohrabi, N. V. Gaponenko, M. V. Rudenko, S. M. Zavadski, D. A. Golosov, A. F. Guk, V. V. Kolos, A. N. Pyatlitski, A. S. Turtsevich
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 7, Pp 28-31 (2019)
The thin film capacitors were formed on silicon. The capacitor is based on the strontium titanate multi-layer which was fabricated using the sol-gel method after heat treatment at the temperature 750 or 800 °C. The lower and upper electrodes were ma
Externí odkaz:
https://doaj.org/article/438ca932fb7c4af780ecf0532c6ec3ba
Autor:
A. H. Sohrabi, N. V. Gaponenko, M. V. Rudenko, S. M. Zavadski, D. A. Golosov, B. S. Kolosnitsin, V. V. Kolos, A. N. Pyatlitski, A. S. Turtsevich
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 8, Pp 10-15 (2019)
The strontium titanate thin films were fabricated on silicon using the sol-gel method. The strontium titanate phase was registered with X-ray diffraction analysis after heat treatment in the temperature range 750-1000 °C. The films were deposited by
Externí odkaz:
https://doaj.org/article/67d8100c1730466f85a77faa86e84236
Autor:
P. A. Kholov, N. V. Gaponenko, D. A. Golosov, S. M. Zavadski, V. A. Ivanov, V. V. Kolos, B. S. Kolosnitsin
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 1, Pp 19-24 (2019)
The SrTiO3 (strontium titanate xerogel) films were fabricated on the substrates of monocrystalline silicon using the sol-gel method at the annealing temperature 750 °С. The upper nickel electrodes were fabricated using the magnetron sputtering, and
Externí odkaz:
https://doaj.org/article/f6ed6bd32350462bab448486f3d54572
Autor:
V. V. Kolos
Publikováno v:
Sistemnì Doslìdženâ ta Informacìjnì Tehnologìï, Iss 1 (2019)
Обоснована интерпретация телекоммуникационной информационно-образовательной среды (ТИОС) как бинарной системы, двумя макропеременным
Externí odkaz:
https://doaj.org/article/6230967a44e344e29dd271ca1aaa51b2