Zobrazeno 1 - 10
of 59
pro vyhledávání: '"V. V. Kirienko"'
Publikováno v:
Semiconductors. 55:654-659
Publikováno v:
JETP Letters. 113:498-503
It has been found that the introduction of layers of Ge/Si quantum dots in a two-dimensional photonic crystal leads to a strong (up to a factor of 5) increase in the photocurrent in the near infrared range. The photonic crystal is a regular triangula
Publikováno v:
Nanomaterials, Vol 11, Iss 2302, p 2302 (2021)
Nanomaterials; Volume 11; Issue 9; Pages: 2302
Nanomaterials
Nanomaterials; Volume 11; Issue 9; Pages: 2302
Nanomaterials
Group-IV photonic devices that contain Si and Ge are very attractive due to their compatibility with integrated silicon photonics platforms. Despite the recent progress in fabrication of Ge/Si quantum dot (QD) photodetectors, their low quantum effici
Autor:
V. V. Kirienko, S. V. Trubina, R. V. Pushkarev, Vladimir Nadolinnyy, N. I. Fainer, Ivan Merenkov, Kristina O. Kvashnina, Simon Ehrenburg, A. A. Matsynin
Publikováno v:
Journal of Materials Chemistry C. 7:4250-4258
Amorphous ferromagnetic materials with variable composition are promising candidates for application in rapidly-growing technological fields, such as spintronics. However, the significant downside of current state-of-the-art materials is a conductivi
Publikováno v:
International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis.
In this work investigated crystal structure of films formed by molecular beam epitaxy (MBE) of CaSi2 on Si (111), under electron irradiation by the method of Raman light scattering (RS), it was found that a CaSi2 film is formed at the interface betwe
Publikováno v:
International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis.
Many studies are dedicated to the problem of optical anomalies, focusing mainly on the case of metallic gratings. In the mean time, there is an increasing interest in resonant all-dielectric elements, as they offer a low-loss alternative to plasmonic
Publikováno v:
International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis.
The crystal structure of films formed by molecular beam epitaxy (MBE) CaSi2 on Si (111) under electron irradiation was investigated [1]. It was found by the method of Raman scattering (RS) that with an increase in the thickness of the CaF2 film, a st
Publikováno v:
Current applied physics. 2020. Vol. 20, № 7. P. 877-882
The paper is devoted to optical testing of mid-infrared Ge/Si photodetectors obtained by stacking of self-assembled Ge quantum dots in multilayer structures, which are near-field coupled to the adjacent nanoplasmonic arrays of subwavelength holes in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d396300edb71f3a9ec32e9c21652744
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794387
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794387
Publikováno v:
JETP Letters. 108:374-378
The spectral characteristics of the hole photocurrent in plasmon photodetectors based on Ge/Si heterostructures with Ge quantum dots combined with regular arrays of subwavelength apertures of various shapes in a gold film on the semiconductor surface
Autor:
Vladimir Zinovyev, A. I. Yakimov, A. F. Zinovieva, Alekcei Bloshkin, Anatoliy Vasilevich Dvurechenskii, A. V. Mudryi, V. V. Kirienko
Publikováno v:
Defect and Diffusion Forum. 386:68-74
New approaches to enhance properties of silicon based quantum dot heterostructures for optical device application were developed. That is strain driven heteroepitaxy, small-sized quantum dots, elemental compositions of the heterointerface, virtual su