Zobrazeno 1 - 10
of 41
pro vyhledávání: '"V. V. Khomyak"'
Publikováno v:
Шпитальна хірургія. Журнал імені Л. Я. Ковальчука. :76-79
Мета роботи: вивчити переваги та недоліки відеоасистованої паратиреоїдектомії. Матеріали і методи. У нашій клініці від лютого 2010 року д
В роботі проведено дослідження електричних та фотоелектричних властивостей гетероструктури n-Zn0.5Cd0.5O/p-InSe. Плівка Zn0.5Cd0.5O наносилась на пі
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::332645b8c1a78b3eae419e4a14bf3706
https://essuir.sumdu.edu.ua/handle/123456789/85948
https://essuir.sumdu.edu.ua/handle/123456789/85948
Autor:
L. I. Petrosyan, Marek Godlewski, L. I. Ovsiannikova, G. V. Lashkarev, R. Pietruszka, V. V. Kartuzov, V. V. Khomyak, M. V. Dranchuk, V. A. Karpyna
Publikováno v:
Low Temperature Physics. 43:515-519
The properties of transparent conductive materials based on wide-gap zinc oxide semiconductors are considered, which are promising in their application to photovoltaics and liquid crystal displays. The impact of aluminum doping on the conductivity of
Autor:
Zakhar R. Kudrynskyi, V. V. Khomyak, V. V. Netyaga, Zakhar D. Kovalyuk, B. V. Kushnir, V. M. Katerynchuk
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5-6, Pp 50-54 (2015)
The article is devoted to studying of influence of vacuum low-temperature annealing on the electrical and photoelectric characteristics of n-ZnO — p-InSe heterostructure. Indium monoselenide (InSe) is a semiconductor of the A3B6 group of layered co
Publikováno v:
Journal of Alloys and Compounds. 649:878-884
The k.p method and the effective mass theory are applied to compute valence-band electronic structure and optical properties of ZnO1-xSx ternary alloys under biaxial strain. A significant modification of the band structure with increasing sulfur cont
Autor:
B. V. Kushnir, V. V. Netyaga, M. Z. Kovalyuk, V. V. Khomyak, V. N. Katerynchuk, Zakhar R. Kudrynskyi
Publikováno v:
Thin Solid Films. 582:253-257
Indium monochalcogenide (InSe) with a band gap of 1.25 eV is a promising material for photovoltaic applications. In this work, photosensitive anisotype n-ZnO/p-InSe heterojunctions were fabricated by means of radio-frequency magnetron sputtering of t
Autor:
L. I. Ovsiannikova, V. A. Karpyna, Volodymyr Khranovskyy, A. I. Ievtushenko, I. Timofeeva, P. V. Demydiuk, D. V. Myroniuk, V. V. Khomyak, Ivan Shtepliuk, G. V. Lashkarev, V. I. Popovich, V. V. Kartuzov, V. N. Tkach, O.Y. Khyzhun, N. V. Dranchuk
Publikováno v:
Low Temperature Physics. 41:129-140
A study of the properties of materials based on the wide bandgap zinc oxide semiconductor, which are promising for application in optoelectronics, photovoltaics and nanoplasmonics. The structural and optical properties of solid solution Zn1−xCdxO f
Autor:
G. V. Lashkarev, M. I. Ilashchuk, Viktor V. Brus, V. V. Khomyak, I. G. Orletsky, Ivan Shtepliuk
Publikováno v:
Acta Physica Polonica A. 126:1163-1166
We have fabricated photosensitive anisotype n-CdxZn1−xO/p-CdTe heterojunctions by a deposition of Cd0.5Zn0.5O lm onto freshly-cleaved CdTe monocrystalline wafers using a radiofrequency magnetron reactive sputtering of a zinc cadmium alloy target. F
Autor:
P. N. Gorley, A. I. Savchuk, V. V. Khomyak, V. I. Fediv, Alessio Perrone, S. V. Bilichuk, A.G. Voloshchuk, I.D. Stolyarchuk
Publikováno v:
Materials Science and Engineering: C. 23:753-756
The technique of pulsed laser deposition and colloidal chemistry methods have been applied for synthesis of semimagnetic semiconductor Cd 1− x Mn x Te nanocrystals embedded in dielectric matrix. The performed analysis suggests a narrower size distr
Autor:
Viktor Strelchuk, Ivan Shtepliuk, I. Timofeeva, O.F. Kolomys, V.Y. Lazorenko, V. T. Maslyuk, G. V. Lashkarev, A.S. Romaniuk, D. V. Myroniuk, V. V. Khomyak
Publikováno v:
Acta Physica Polonica A. 124:891-894
and Optical Properties of ZnO Films D.V. Myroniuka,∗, G.V. Lashkarev, I.I. Shtepliuk, V.Y. Lazorenko, V.T. Maslyuk, I.I. Timofeeva, A.S. Romaniuk, V.V. Strelchuk, O.F. Kolomys and V.V. Khomyak Frantsevich Institute for Problems of Material Science,