Zobrazeno 1 - 3
of 3
pro vyhledávání: '"V. V. Katsoev"'
Publikováno v:
Semiconductors. 43:1667-1670
The model describing the physical processes accompanying the interaction of heavy charged particles with an ionizing-radiation semiconductor detector is proposed. The problem of optimization of electrical characteristics and construction of the detec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aef3dcfd0f1491c46769932fc608c594
https://doi.org/10.1134/s1063782609130119
https://doi.org/10.1134/s1063782609130119
Publikováno v:
Russian Microelectronics. 37:296-301
Requirements are defined for GaAs materials intended for solid-state detectors of ionizing radiation. A model is proposed to ascertain the role of deep-level centers in compensated semi-insulating GaAs. The model consists of transport equations and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ce23bcc94415cba6089dbd86a711a74
https://doi.org/10.1134/s1063739708050028
https://doi.org/10.1134/s1063739708050028
Autor:
L. V. Katsoev, N. M. Shmidt, V. N. Mdivani, A. T. Gorelenok, O. V. Titkova, A. A. Tomasov, V.M. Lantratov, S. S. Shmelev, N. A. Kalyuzhnyĭ, É. A. Il’ichev, Pavel N. Brunkov, S. A. Mintarov, V. V. Katsoev, Yu. M. Zadiranov
Publikováno v:
Technical Physics Letters. 32:987-989
It is shown that p-i-n detectors of α particles can be created using high-ohmic (n ∼ 1012 cm−3) gallium arsenide obtained through lanthanide gettering of a low-ohmic (n ∼ 1015 cm−3) initial material wafers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::424cb4474d4a86c4778461c257b6d48e
https://doi.org/10.1134/s1063785006110241
https://doi.org/10.1134/s1063785006110241