Zobrazeno 1 - 10
of 78
pro vyhledávání: '"V. V. Kapaev"'
Publikováno v:
JETP Letters. 116:205-211
Autor:
V. I. Egorkin, V. A. Bespalov, A. A. Zaitsev, V. E. Zemlyakov, V. V. Kapaev, O. B. Kukhtyaeva
Publikováno v:
Semiconductors. 55:1039-1044
Publikováno v:
Physical Review B. 106
Publikováno v:
Russian Microelectronics. 49:445-451
We perform the numerical simulation of the characteristics of normally-off GaN/AlGaN HEMT transistors with a p-gate. The dependences of the threshold voltage on the thickness of the main AlGaN barrier and additional spacer and stop AlN layers are det
Publikováno v:
Physical Review B. 104
We study transport properties and the formation of bound states in the continuum (BIC) in asymmetric quantum mechanical and electromagnetic waveguides. An analytical model for an arbitrary asymmetric two-terminal quantum mechanical waveguide is propo
Publikováno v:
Optics express. 28(10)
We propose a simple technique of cutting short pulses out of a sharp edge input signal. The technique is based on the Fano antiresonance buildup dynamics. The output pulse duration is inverse proportional to the coupling strength to the resonator. We
Autor:
V. V. Kapaev, M. N. Zhuravlev
Publikováno v:
Quantum Electronics. 48:954-961
Publikováno v:
Journal of Physics: Conference Series. 2086:012058
GaN technology has been waiting to be widely adopted because of its specific technical requirements. Integration of transistor and driver in a single die will enable to overcome problems with gate driving, high cost of circuit and low device reliabil
Autor:
Vladimir S. Gorelik, V. V. Kapaev
Publikováno v:
Journal of Experimental and Theoretical Physics. 123:373-381
The electromagnetic-field distribution in a finite one-dimensional photonic crystal is studied using the numerical solution of Maxwell’s equations by the transfer-matrix method. The dependence of the transmission coefficient T on the period d (or t
Autor:
V. I. Egorkin, V. V. Kapaev
Publikováno v:
Russian Microelectronics. 45:205-214
The phenomenon of terahertz radiation detection by resonant tunneling structures (RTSs) has been studied. The calculations of the changes ΔI0 in the direct current (DC) component I0 under the action of an alternating electric field were carried out