Zobrazeno 1 - 10
of 19
pro vyhledávání: '"V. V. Ilchenko"'
Publikováno v:
Medična Informatika ta Inženerìâ, Iss 3, Pp 18-23 (2023)
У роботі розглянуто питання ролі популяції печінкових макрофагів у морфо- та патогенезі неалкогольного стеато-гепатиту (NASH). Головним з
Externí odkaz:
https://doaj.org/article/4099e35d8d8a447c9b023b1c910238e8
Publikováno v:
ACADEMIC JOURNAL Series: Industrial Machine Building, Civil Engineering. 1:56-61
In the article local repair automobile tires expediency by vulcanization means in mechanical damage carcass case is shown. It has been established that analytical and experimental data on determining the required temperature of the heating element ha
Publikováno v:
ACADEMIC JOURNAL Series: Industrial Machine Building, Civil Engineering. 1:258-264
The most common ways of milled asphalt re-use, what is formed during road topping repair is considered. The results of experimental studies of preparation technology features and physical and mechanical properties of recycled hot mix asphalt determin
Autor:
C. P. Lee, V. V. Marin, A. A. Buyanin, Sheng-Di Lin, O. V. Tretyak, V. V. Ilchenko, M. V. Shkil, K. Y. Panarin
Publikováno v:
Sensor Electronics and Microsystem Technologies. 3:3-9
Publikováno v:
Sensor Electronics and Microsystem Technologies. 1:15-19
Publikováno v:
IOP Conference Series: Earth and Environmental Science. 272:032218
The purpose of the article is to analyze the trends and assess the level of the development of high-tech production in various countries worldwide, as well as to theorize the directions of scientific and technical development of the country by means
Publikováno v:
Semiconductor Physics Quantum Electronics and Optoelectronics. 14:241-246
The theoretical and experimental investigations of electrical properties of the Al-SiO2- -SiO ( ncs Si − 2-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally found that the Al-SiO2- (
Publikováno v:
Semiconductor physics, quantum electronics and optoelectronics. 13:012-018
The theoretical and experimental investigations of electrical properties of the SiO2/Si-ncs/SiO2/Si structures grown by high temperature annealing SiOX, X
Autor:
I. V. Nosenko, V. V. Ilchenko, C. P. Lee, Sheng-Di Lin, D. I. Sheka, A. M. Korol, O. V. Tretyak
Publikováno v:
Journal of Physical Studies. 11:294-297
Resonant-tunneling processesing electrons in a system consisting of the double-barrier resonanttunneling structure built in the Schottky barrier are studied. It is shown that the coherent tunneling can take place in this system; both the transmission
Publikováno v:
Czechoslovak Journal of Physics. 43:169-178
The paper concerns the possibility of using CW (continuous wave) CO2-laser annealing (λ=10.6 μm,P≤ 100 W/cm2) for formation of a barrier in the Al/a-Si:H/SS (SS-stainless steel) structures with good rectifyingI–V characteristics. The infrared a