Zobrazeno 1 - 10
of 52
pro vyhledávání: '"V. V. Evstropov"'
Autor:
N. A. Kalyuzhnyy, V. V. Evstropov, V. M. Lantratov, S. A. Mintairov, M. A. Mintairov, A. S. Gudovskikh, A. Luque, V. M. Andreev
Publikováno v:
International Journal of Photoenergy, Vol 2014 (2014)
A number of important but little-investigated problems connected with III-V/Ge heterostructure in the GaInP/GaInAs/Ge multijunction solar cells grown by MOVPE are considered in the paper. The opportunity for successfully applying the combination of r
Externí odkaz:
https://doaj.org/article/cbf0c45c75b84d88977dc4ccd7fb5a19
Autor:
Mikhail A. Mintairov, Sergey A. Mintairov, M. Z. Shvarts, Nikolay A. Kalyuzhnyy, V. V. Evstropov
Publikováno v:
Semiconductors. 53:1535-1539
The “top” intergenerator part situated between the GaInP and GaAs subcells (electric power generators) is analyzed. The shape of the light current–voltage characteristics and the Voc–Jsc (open-circuit voltage–short-circuit current) dependen
Publikováno v:
Technical Physics Letters. 46:332-334
A relationship has been established between the energy gap width of GaInAs p–n homojunctions and the saturation current. For this purpose, a method was suggested and substantiated for determining the energy gap width of a p–n junction from the sp
Publikováno v:
Technical Physics Letters. 45:1100-1102
An anomaly appearing in the photovoltaic characteristics of triple-junction GaInP/GaAs/Ge and of the corresponding double-junction GaInP/GaAs solar cells at ultrahigh concentrations (more than 2000 suns) of incident light has been studied. The light
Autor:
Sergey A. Mintairov, V. V. Evstropov, Nikolay A. Kalyuzhnyy, Maxim Z. Shvarts, Mariia V. Nakhimovich, Mikhail A. Mintairov
Publikováno v:
AIP Conference Proceedings.
GaAs solar cells with different number of rows of GaInAs quantum objects have been studied. It has been shown that recombination through quantum objects linearly increases with respect to recombination through the bulk GaAs with the number of rows in
Autor:
Sergey A. Mintairov, R. A. Salii, V. V. Evstropov, M. A. Mintairov, M. Z. Shvarts, Nikolay A. Kalyuzhnyy
Publikováno v:
Semiconductors. 52:1244-1248
Photovoltaic structures on the basis of GaAs p–i–n junctions with a different number of In0.4Ga0.6As layers in the space-charge region forming quantum-confined objects are experimentally and theoretically investigated. For all structures, the dep
Autor:
Nikolay A. Kalyuzhnyy, Sergey A. Mintairov, V. V. Evstropov, Maxim Z. Shvarts, Mikhail A. Mintairov
Publikováno v:
15th International Conference on Concentrator Photovoltaic Systems (CPV-15).
The temperature characteristics of GaAs solar cells with 0, 1, 5, 10 and 15 rows of GaInAs quantum objects have been investigated. Introducing of quantum objects into GaAs p-n junction leads to ope...
Autor:
V. V. Evstropov, Evgeniy D. Filimonov, Alexandra V. Malevskaya, Nikolay A. Kalyuzhnyy, S. A. Levina, Mikhail A. Mintairov, Maxim Z. Shvarts, V. M. Emelyanov
Publikováno v:
15th International Conference on Concentrator Photovoltaic Systems (CPV-15).
In the present work processes of light redistribution within the multijunction solar cell were investigated. The possibility to control efficiency of luminescent coupling, up to its totally blocking, is described. Temperature of the tested sample is
The dependence of recombination in GaAs solar cells on the number of included GaInAs quantum objects
Autor:
M. Z. Shvarts, M. A. Mintairov, S. A. Mintairov, N. A. Kalyuzhnyy, V. V. Evstropov, M. V. Nakhimovich
Publikováno v:
Journal of Physics: Conference Series. 1695:012092
The experimental characteristics of GaAs p-i-n structures with InGaAs quantum objects (QOs) have been investigated. The study of electroluminescence spectra has shown that an increase of the number of QOs layers leads to relative increase in electrol