Zobrazeno 1 - 6
of 6
pro vyhledávání: '"V. V. Dyudelev"'
Autor:
N. D. Il’inskaya, A. N. Sofronov, A. V. Babichev, V. V. Dyudelev, L. Ya. Karachinsky, V. N. Nevedomskii, G. A. Gusev, Yu. M. Zadiranov, A. G. Gladyshev, Innokenty I. Novikov, A. A. Usikova, Grigorii S. Sokolovskii, L. E. Vorob’ev, D. A. Firsov, A. Yu. Egorov
Publikováno v:
Technical Physics. 63:1511-1515
Lasing in MBE-grown impulsively pumped quantum cascade lasers of 9.6 μm at 140 K has been demonstrated. The active area is based on three-phonon resonance scattering of electrons. An In0.53Ga0.47As/Al0.48In0.52As solid alloy heteropair was used to f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e9b87d9374bde4e2d3fe086fbdf481d
https://doi.org/10.1134/s1063784218100043
https://doi.org/10.1134/s1063784218100043
Autor:
Grigorii S. Sokolovskii, V. I. Kuchinskii, S. V. Zazulin, A. G. Deryagin, V. V. Dyudelev, E.D. Kolykhalova, M. V. Efanov, S. N. Losev
Publikováno v:
Technical Physics. 62:1885-1888
Fiber-coupled semiconductor lasers are studied under pumping with high-power short current pulses. Appropriate parameters of the current pumping make it possible to substantially reduce the output pulse duration to 80 ps for a single-mode laser and 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49ec749243586268f3a3570443aaf43d
https://doi.org/10.1134/s1063784217120131
https://doi.org/10.1134/s1063784217120131
Autor:
A I Sobolev, Grigorii S. Sokolovskii, V Sibbet, A. G. Deryagin, V. V. Dyudelev, M. Butkus, S. N. Losev, K K Soboleva, Edik U. Rafailov, V. I. Kuchinskii
Publikováno v:
Quantum Electronics. 43:423-427
We study the peculiarities of the formation of Bessel beams in semiconductor lasers with a high propagation parameter M2. It is shown that the propagation distance of the Bessel beam is determined by the divergence of the quasi-Gaussian beam with hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b443f92a641eb54efe8c6eaacc02679
https://doi.org/10.1070/qe2013v043n05abeh015170
https://doi.org/10.1070/qe2013v043n05abeh015170
Autor:
Mikhail V. Maximov, A. R. Kovsh, V. V. Dyudelev, Nikolai A. Maleev, Innokenty I. Novikov, S. A. Blokhin, N. N. Ledentsov, M. M. Kulagina, Yu. M. Shernyakov, N. Yu. Gordeev, S. S. Mikhrin, V. I. Kuchinskiĭ, A. G. Kuzmenkov, G. S. Sokolovskiĭ, V. M. Ustinov
Publikováno v:
Semiconductors. 40:615-619
Vertical-cavity surface-emitting lasers (VCSELs) with an active region based on sub-monolayer InGaAs quantum dots and doped AlGaAs/GaAs distributed Bragg reflectors were grown by MBE. VCSELs with current aperture of 3 µm in diameter demonstrate sing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f3a3c12e662d67b9b9ea86eae6b3bd8
https://doi.org/10.1134/s1063782606050186
https://doi.org/10.1134/s1063782606050186
Autor:
Yu. P. Yakovlev, A. G. Deryagin, I. A. Andreev, O. Yu. Serebrennikova, M. P. Mikhailova, V. I. Kuchinskii, I. M. Gadzhiev, E. A. Grebenshchikova, E. V. Kunitsyna, V. V. Dyudelev, G. G. Konovalov, N. D. Il’inskaya, Grigorii S. Sokolovskii
Publikováno v:
Technical Physics Letters. 36:412-414
Fast-response, uncooled p-i-n photodiodes with a long-wavelength spectral sensitivity boundary at λ = 2.4 μm have been created on the basis of GaSb/GaInAsSb/GaAlAsSb heterostructures. A low doping level (1014–1015 cm−3) in the active layer ensu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32f7cdca2cb6a734b20a0b90218fe669
https://doi.org/10.1134/s1063785010050068
https://doi.org/10.1134/s1063785010050068
Autor:
A. G. Deryagin, D. A. Vinokurov, I. S. Tarasov, G. S. Sokolovskiĭ, V. I. Kuchinskiĭ, V. V. Dyudelev, A. V. Lyutetskiĭ, Nikita A. Pikhtin, A. L. Stankevich
Publikováno v:
Technical Physics Letters. 34:187-189
Use of an external cavity with a grating ensures effective narrowing of the linewidth (~0.35 nm) of a high-power multimode semiconductor laser with a broad (100 µ m) stripe contact. An output power of up to 550 mW has been reached with experimental
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d65b4206903217ecfdce00d54c312e2
https://doi.org/10.1134/s1063785008030036
https://doi.org/10.1134/s1063785008030036