Výsledky vyhledávání - "V. V. Dovganyuk"

Defect structure changes in the single Si-crystals after irradiation by high-energy electrons and long natural aging by high-resolution three-crystal x-ray diffractometry

Autor: V. V. Dovganyuk, M. I. Fodchuk, T. V. Lytvynchuk, V. V. Slobodyan

Publikováno v: SPIE Proceedings.

Methods of two- and three-crystal X-ray high-resolution diffractometry were used to investigate structural changes in Cz-Si single crystals irradiated with high-energy electrons (E=18 MeV). The results of experimental investigation were interpreted b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1665f31fd5682bebc71735e64482129f
https://doi.org/10.1117/12.797224

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Use of acoustic waves in x-ray topography of silicon crystals

Autor: V. V. Dovganyuk, D. G. Fedortsov, S. N. Novikov

Publikováno v: SPIE Proceedings.

The influence of transverse ultrasonic wave parameters on the diffraction contrast forming on X-ray section topographs for microdefects and dislocations was investigated by the numerical solution of Takagi's equations system. The corresponding change

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::24a2c8fa0dc1d17990f857c650605a61
https://doi.org/10.1117/12.560005

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