Zobrazeno 1 - 3
of 3
pro vyhledávání: '"V. V. Budaragin"'
Publikováno v:
Semiconductors. 50:1107-1111
We investigate the efficiency of the introduction of a porous layer into the substrate of a silicon-onsapphire structure by the implantation of He ions to enhance the radiation resistance of devices. The properties of the introduced layer and its par
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbe2fcd5ae8101596ababc22e228fb47
https://doi.org/10.1134/s1063782616080054
https://doi.org/10.1134/s1063782616080054
Publikováno v:
Radiation Effects and Defects in Solids. 158:771-781
The processes of accumulation of ion implanted hydrogen in blisters in silicon and its release during the thermal treatment from 350 to 1020 °C have been studied by optical techniques. It was established that accumulation of gaseous hydrogen inside
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d8448df740c9dc22d874f9d420b51d4
https://doi.org/10.1080/1042015021000043854
https://doi.org/10.1080/1042015021000043854
Publikováno v:
Physical and Technical Problems of SOI Structures and Devices ISBN: 9789401040525
Silicon layers implanted with high doses of oxygen and hydrogen ions (separately and consequently) were investigated by IR-spectroscopy technique. The absorption bands centered at 615, 630, 890, and 2110 cm−1 were observed in the case of only hydro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d6d3f7b41c167e4cbb361f809c82a2c
https://doi.org/10.1007/978-94-011-0109-7_15
https://doi.org/10.1007/978-94-011-0109-7_15
