Zobrazeno 1 - 8
of 8
pro vyhledávání: '"V. V. Bogoboyashchiy"'
Autor:
N. N. Berchenko, E. M. Sheregii, V. A. Yudenkov, I. I. Izhnin, M. Pociask, V. V. Bogoboyashchiy
Publikováno v:
physica status solidi (c). 2:1418-1422
The paper presents preliminary results of the experiments performed to study the influence of low energy Ar ions on the electrical properties of p-InSb under ion beam milling. We demonstrate that this treatment causes the 2-layer structure with elect
Publikováno v:
Surface and Coatings Technology. :732-736
The mechanism of p-to-n type conductivity conversion under ion beam milling (IBM) in extrinsically (As or Sb)-doped p-Cd x Hg 1-x Te with x0.2 both experimentally and theoretically was studied. It has been experimentally revealed that the character o
Publikováno v:
physica status solidi (b). 229:279-282
This study focuses on developing an understanding of the mechanisms of ion beam milling induced p-to-n conversion in extrinsically (As or Sb) doped p-Hg 1-x Cd x Te with x 0.2. The basis of modeling is the quasichemical approach and the model of supe
Publikováno v:
physica status solidi (c). :872-874
The paper presents the preliminary results of experiments performed to study the influence of low-energy Ar ions on the electrical properties of p- and n-type PbTe epitaxial films under ion beam milling. We demonstrate that this treatment causes p-to
Autor:
K. R. Kurbanov, V. V. Bogoboyashchiy
Publikováno v:
SPIE Proceedings.
Bulk Hg0.8Cd0.2Te crystals still are widely used as a base material for manufacturing IR photoreceivers for the 8-14 micrometers wavelengths range. As these purposes need the material with high mobility of electrons and very low concentration of impu
Autor:
V. V. Bogoboyashchiy
Publikováno v:
SPIE Proceedings.
Far IR engineering finds more and more broad applications in the most various purposes, for example, for monitoring technological processes, environment monitoring, in medicine, etc. Last year the significant successes are reached in the technology o
Autor:
V. V. Bogoboyashchiy
Hall effect, resistivity and p-n-junction characteristics were investigated on high pure and perfect p-type Hg₁₋xCdxTe crystals (x ~ 0.2) versus temperature, doping, and a way of heat treatment. It was shown, that activation energy of extrinsic a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa06dec5a4d176ca1b8f6e525f135896
http://dspace.nbuv.gov.ua/handle/123456789/117935
http://dspace.nbuv.gov.ua/handle/123456789/117935
Autor:
V. V. Bogoboyashchiy
Publikováno v:
SPIE Proceedings.
Faraday rotation, absorption spectra, and the intrinsic carrier concentration temperature dependencies were investigated in order to determine the interconsistent system of values of the narrow-gap Hg1-xCdxTe band parameters. The undoped and doped wi