Zobrazeno 1 - 10
of 13
pro vyhledávání: '"V. V. Bogatyrenko"'
Publikováno v:
SPIE Proceedings.
Primary challenges in Si science and technology are centered on active device engineering issues with the impact made at their photonic characteristics and applications. Low cost and mature Si technology is driving force toward making optoelectronic
Autor:
V. V. Bogatyrenko, V. K. Malyutenko
Publikováno v:
Physical Review B. 76
Linear light down-conversion LDC has been a convenient method for generating light by applying a short wavelength photon to a medium that responds by emitting one, two, or more longer wavelength photons. Such LDC processes like photoluminescence in s
Autor:
V. V. Bogatyrenko, V. K. Malyutenko
Publikováno v:
SPIE Proceedings.
We report on the fundamentals and technology of Si-based linear all-optical light down-conversion process. The approach is in the possibility to enhance the thermal emission power of semiconductors in the spectral range of intraband electron transiti
Publikováno v:
SPIE Proceedings.
This paper presents new physical concept and Hardware-in-the-Loop Facility for simulating cold background and/or target in 3-5 μm and 8-12 μm atmospheric transparency windows. The goal for this work is the demonstration of scene projector capable o
Publikováno v:
SPIE Proceedings.
We report on basic principle and technology of Si high-temperature (T>300K) IR emitter based on all optical down conversion concept. The approach is based on the possibility to modulate semiconductor thermal emission power in the spectral range of in
Autor:
S. V. Chyrchyk, James Robert Kircher, Donald R. Snyder, V. V. Bogatyrenko, Robert Lee Murrer, Oleg Yu. Malyutenko, V. K. Malyutenko
Publikováno v:
SPIE Proceedings.
In this report, we show both theoretically and experimentally how the IR signature of a semiconductor scene (with band gap energy Eg) can be monitored through contactless emissivity control even if this scene thermometric temperature is kept constant
Autor:
Volodymyr K. Malyutenko, V. V. Bogatyrenko, Oleg Y. Malyutenko, Donald R. Snyder, August J. Huber, James D. Norman
Publikováno v:
SPIE Proceedings.
Publikováno v:
Applied Physics Letters. 103:261106
In contrast to radiative cooling by light up conversion caused exclusively by a low-entropy laser pump and employing thermally assisted fluorescence/luminescence as a power out, we demonstrate light down conversion cooling by incoherent pumps, 0.47
Publikováno v:
Applied Physics Letters. 102:131109
A Si-based fast (frame rate >1 kHz), large-scale (scene area 100 cm2), broadband (3–12 μm), dynamic contactless infrared (IR) scene projector is demonstrated. An IR movie appears on a scene because of the conversion of a visible scenario projected
Autor:
V. K. Malyutenko, V. V. Bogatyrenko
Publikováno v:
Applied Physics Letters. 101:081111
To bypass indirect bandstructure limitations in Ge and have it effectively emitting, we employ light down conversion process at elevated temperatures (emissivity enhancement technique). By applying short wavelength pump light (λin, interband electro