Zobrazeno 1 - 10
of 21
pro vyhledávání: '"V. V. Arbenina"'
Publikováno v:
Тонкие химические технологии, Vol 10, Iss 6, Pp 37-43 (2015)
Many techniques for high-resolution surface analysis of semiconductors are known, such as optical-, X-ray-, transmission electron microscopy etc. However, atomic-force microscopy and scanning electron microscopy are generally used. In this article, b
Externí odkaz:
https://doaj.org/article/376600e3557a4f55b235f90dbb6010cd
Publikováno v:
Тонкие химические технологии, Vol 10, Iss 3, Pp 70-76 (2015)
An information-calculating system (ICS) that allows computer simulation of processes of semiconductor technology associated with the formation of single crystals and epitaxial heterostructures based on semiconductor AIIIBV compounds was developed. Th
Externí odkaz:
https://doaj.org/article/d3b8dbcbd5fd4aca84abc2bd100c3a21
Publikováno v:
Тонкие химические технологии, Vol 9, Iss 5, Pp 44-48 (2014)
The formation of the microstructure of metallization layers was investigated, and the calculations of the size of diffusion areas on the interphase boundaries in systems metal (Au, Ti, Pt)/GaAs and metal / metal was executed. The formation of the mic
Externí odkaz:
https://doaj.org/article/4e79ad2bd1ed440b9e8e076b2cbca9fe
Publikováno v:
Тонкие химические технологии, Vol 8, Iss 6, Pp 82-87 (2013)
In spite of the fact that solid solution CdxHg1-xTe is the most sensitive and effective semiconductor material for matrix photodetectors, weak internuclear connection Hg–Cd and high energy диссоциации molecules Tе2 result in formation C
Externí odkaz:
https://doaj.org/article/4a9fb1d5a8cc4526aeb026a2b4c5c685
Autor:
А. С. Kashuba, A. V. Zablotsky, E. V. Korostylev, A. A. Kuzin, E. V. Permikina, V. V. Arbenina
Publikováno v:
Тонкие химические технологии, Vol 5, Iss 5, Pp 19-23 (2010)
Data of morphology of epitaxial layers CdXHg1-XTe, which has been grown on substrates GaAs (310) by MBE, have been presented. Peculiarities of growing V-defects have been studied by scanning electronic microscopy techniques and EDS. The structure, or
Externí odkaz:
https://doaj.org/article/ee6e21a0db024bd496d6a3a8c2438abe
Publikováno v:
Тонкие химические технологии, Vol 4, Iss 4, Pp 78-83 (2009)
The influence of growth surface defects of CdхHg1-хTe epitaxial layers which has been grown by liquid phase epitaxy on quality of passivating coatings, creating by the method of the hot wall, is investigated. The reason of negative action nonplanar
Externí odkaz:
https://doaj.org/article/ce4ac42317ed481389a0532da436e3e3
Publikováno v:
Тонкие химические технологии, Vol 3, Iss 4, Pp 94-100 (2008)
The structure of the database is developed, allowing to unit in one electronic reference media of data on properties of materials on the basis of semiconductor phases with their simultaneous ordering both necessary for technologists the data on condi
Externí odkaz:
https://doaj.org/article/12ac5370934c49c99eeb4110355a420d
Publikováno v:
Тонкие химические технологии, Vol 2, Iss 5, Pp 51-56 (2007)
The features of formation passivation coverings of cadmium telluride on epitaxial layers CdхНg1-хТе used for manufacturing of matrix photodetectors of the IR-range are investigated. The laws of process of passivation coverings creation by a meth
Externí odkaz:
https://doaj.org/article/aa6645aa6ab2448c87de2aefb58adaeb
Autor:
Anastasiya V. Ryabova, Pavel P. Fedorov, R. P. Ermakov, S. V. Kuznetsov, Yu. A. Rozhnova, A.A. Luginina, D. V. Pominova, V. V. Arbenina, Valery V. Voronov, V. V. Osiko
Publikováno v:
Materials Chemistry and Physics. 148:201-207
We have developed a synthetic protocol for the preparation of SrF 2 -based Yb 3+ /Er 3+ /Tm 3+ -coactivated nano-crystalline white light luminophores by co-precipitation from aqueous solutions and have achieved a good level of sample homogeneity in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c99268b562c024e8cc6c7367b6d96e86
https://doi.org/10.1016/j.matchemphys.2014.07.032
https://doi.org/10.1016/j.matchemphys.2014.07.032
Publikováno v:
Inorganic Materials. 48:665-670
CdxHg1 − xTe-based epitaxial heterostructures grown on [310]-oriented GaAs substrates by molecular beam epitaxy have been studied by atomic force, scanning electron, and high-resolution field emission microscopy. A mechanism of defect formation has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b71ecc9a27789db28565ec8c0fccaa7e
https://doi.org/10.1134/s0020168512070126
https://doi.org/10.1134/s0020168512070126