Zobrazeno 1 - 10
of 21
pro vyhledávání: '"V. V Klechkovskaya"'
Autor:
T. S. Kamilov, A. S. Rysbaev, V. V. Klechkovskaya, A. S. Orekhov, Sh. Kh. Dzhuraev, A. S. Kasymov
Publikováno v:
Eurasian Journal of Physics and Functional Materials, Vol 2, Iss 4, Pp 360-366 (2021)
The paper considers the influence of a transition amorphous layer at the interface between the higher manganese silicide (HMS) Mn 4 Si 7 and silicon doped with manganese (Si ) on the photoelectric properties of heterostructures. The role of the initi
Externí odkaz:
https://doaj.org/article/0ced00b9d18845c8bc4891a2546edfe4
Autor:
G. N. Gubanova, D. Timpu, M. Cristea, S. V. Kononova, E. N. Korytkova, D. A. Sapegin, N. N. Saprykina, A. Ya. Volkov, V. V. Klechkovskaya
Publikováno v:
Crystallography Reports. 66:1185-1199
Autor:
I. S. Makarov, Valery G. Kulichikhin, M. I. Vinogradov, V. V. Klechkovskaya, N. A. Arkharova, L. K. Golova, M. V. Mironova
Publikováno v:
Polymer Science, Series C. 63:161-169
Evolution of the morphology of cellulose solutions in N-methylmorpholine-N-oxide during coagulation with a “soft” coagulant, isobutyl alcohol, at different temperatures is considered. Using optical interferometry and transmitted and scanning elec
Publikováno v:
Technical Physics. 58:1182-1188
The kinetics of photocurrent is studied in the presence of the intrinsic irradiation at hν ≥ 1.12 eV in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions at relatively high applied voltages. It is demonstrated that photocurrent,
Publikováno v:
Technical Physics. 56:1423-1428
The current-voltage characteristics of Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes are studied experimentally. The current passage mechanism under illumination with hν ≥ Eg is considered. The role of a contact to Mn4Si7 in the pro
Autor:
S. G. Yudin, V.V. Kochervinskii, H. A. Arkharova, V. V. Klechkovskaya, Boris V. Lokshin, I. S. Zanaveskina
Publikováno v:
Polymer Science Series A. 52:40-48
The relationship between electrophysical properties of super thin Langmuir-Blodgett films of polyvinylidene fluoride and their structural parameters via electron-diffraction and IR-spectroscopy methods was studied. According to analysis of the data,
Publikováno v:
Journal of Structural Chemistry. 50:86-92
A model crystalline approximant of the surface layer (SL) structure of liquid mercury is formed using the algorithm, previously applied to form a crystalline approximant of the SL structure of water, the experimental data on the SL structure of mercu
Autor:
V. V. Klechkovskaya, Olga Morozova, A. V. Strel’tsov, I. N. Staroverova, Galina Shumakovich, N. A. Arkharova, Alexander I. Yaropolov
Publikováno v:
Moscow University Chemistry Bulletin. 64:107-110
In the present work, physico-chemical properties of conducting polyaniline (PANI) prepared by laccase-catalyzed oxidative polymerization in water dispersions of sodium dodecylbenzenesulfonate micellar solutions were studied. The polymer was character
Publikováno v:
Technical Physics. 55:874-876
The growth of manganese silicide films on silicon under the conditions of equilibrium and non-equilibrium diffusion doping of the silicon from the vapor phase is studied for different weight percent of the dopant.
Autor:
R. A. Muminov, Kh. Kh. Khusnutdinova, I.S. Samiev, V. V. Klechkovskaya, T. S. Kamilov, D. K. Kabilov
Publikováno v:
Technical Physics. 50:1102-1104
The formation of higher manganese silicide (HMS) films on silicon and the properties of the silicide-silicon interface are studied. Morphology analysis of the surface and thin transition layer at the HMS-Si interface suggests that the growth of HMS f