Zobrazeno 1 - 10
of 121
pro vyhledávání: '"V. Tezlevan"'
Autor:
Yi-Ping Wang, Kwong-Kau Tiong, Dumitru Dumcenco, E. Arushanov, V. Tezlevan, Ying-Sheng Huang, Ching-Hwa Ho, S. Levcenco
Publikováno v:
Optical Materials. 34:1362-1365
Single crystals of Cu2ZnSn(SxSe1−x)4 (CZTSSe) solid solutions were grown by chemical vapor transport technique using iodine trichloride as a transport agent. As confirmed by X-ray investigations, the as-grown CZTSSe solid solutions are single phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dea09cef929fc86cec21079c14dae4a3
https://doi.org/10.1016/j.optmat.2012.02.028
https://doi.org/10.1016/j.optmat.2012.02.028
Autor:
Ernest Arushanov, S. Levcenco, Dumitru Dumcenco, V. Tezlevan, Ying-Sheng Huang, C.H. Du, Kwong-Kau Tiong
Publikováno v:
Journal of Alloys and Compounds. 509:7105-7108
Polarization-dependent electrolyte electroreflectance (EER) measurements were carried out on the oriented Cu2ZnSiS4 and Cu2ZnSiSe4 single crystals at room temperature. Thin blade single crystals of Cu2ZnSiS4 and Cu2ZnSiSe4 were grown by chemical vapo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::127c79a30645185ebb466ed97766ecf1
https://doi.org/10.1016/j.jallcom.2011.04.013
https://doi.org/10.1016/j.jallcom.2011.04.013
Autor:
Kwong-Kau Tiong, Dumitru Dumcenco, C.H. Du, S. Levcenco, Ernest Arushanov, V. Tezlevan, Ying-Sheng Huang
Publikováno v:
Journal of Alloys and Compounds. 509:4924-4928
Polarization-dependent absorption characterization of Cu2ZnSiQ4 (Q = S, Se) quaternary single crystal compound semiconductors were carried out in the temperature range of 10–300 K. The absorption measurements were performed on the as grown basal pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::434c8a75e0b716627862ea4d2b5ae269
https://doi.org/10.1016/j.jallcom.2011.01.169
https://doi.org/10.1016/j.jallcom.2011.01.169
Autor:
Dumitru Dumcenco, V. Tezlevan, Ying-Sheng Huang, Kwong-Kau Tiong, S. Levcenco, C.H. Du, Ernest Arushanov
Publikováno v:
Journal of Alloys and Compounds. 506:46-50
The temperature dependence of the band-edge excitonic transitions of Cu2ZnSiS4 single crystals were characterized by using polarization-dependent piezoreflectance (PzR) in the temperature range of 10–300 K. The PzR measurements were carried out on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9e45f69d1d33960612227cd01819bd3
https://doi.org/10.1016/j.jallcom.2010.07.027
https://doi.org/10.1016/j.jallcom.2010.07.027
Publikováno v:
1995 International Semiconductor Conference. CAS '95 Proceedings.
The results of the transport phenomena measurements on n-CuInSe/sub 2/ are presented. For the first time the transverse Nernst-Ettingshausen (N-E) effect is investigated in the I-III-VI/sub 2/ materials. From the results of thermoelectric power, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a32824227960f1846c9ce2f5f5b8f137
https://doi.org/10.1109/smicnd.1995.494875
https://doi.org/10.1109/smicnd.1995.494875
Autor:
S. Levcenco, Dumitru Dumcenco, V. Tezlevan, Ying-Sheng Huang, Ernest Arushanov, C.H. Du, Kwong-Kau Tiong
Publikováno v:
Journal of Applied Physics. 108:073508
In this study, anisotropic near band edge transitions of Cu2ZnSiS4 single crystals grown by chemical vapor transport were characterized by using polarization-dependent absorption, piezoreflectance (PzR) and surface photovoltage (SPV) spectroscopy tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acf9556fabd706de17e19d9eed498e3e
https://doi.org/10.1063/1.3490219
https://doi.org/10.1063/1.3490219
Publikováno v:
July 16 ISBN: 9783112495063
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bea48ff5314b4b389953e445c74e053
https://doi.org/10.1515/9783112495063-050
https://doi.org/10.1515/9783112495063-050
Publikováno v:
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics; 4/10/2024, Vol. 38 Issue 9, p1-11, 11p
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