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pro vyhledávání: '"V. Temple"'
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Akademický článek
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Publikováno v:
2015 IEEE Pulsed Power Conference (PPC).
Silicon Power has developed ultra-fast, high reliability Solid State Thyratron and Ignitron Replacements (SSTIR) which also displace conventional SCRs and GTOs. The switches, based on our 2nd Generation Si and SiC SGTOs [1], exhibit turn-on delays
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fdcd153e844b044cce4a6b11eef4e0b
https://doi.org/10.1109/ppc.2015.7296986
https://doi.org/10.1109/ppc.2015.7296986
Autor:
D. S. Passman, W. V. Temple
Publikováno v:
Algebra: Proceedings of the International Algebraic Conference on the Occasion of the 90th Birthday of A. G. Kurosh, Moscow, Russia, May 25-30, 1998
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90951fc3e29f015c8a6f75cf822d3f02
https://doi.org/10.1515/9783110805697.263
https://doi.org/10.1515/9783110805697.263
Publikováno v:
Journal of intellectual disability research : JIDR. 54(6)
Video conferencing (VC) technology has great potential to increase accessibility to healthcare services for those living in rural or underserved communities. Previous studies have had some success in validating a small number of psychological tests f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::8010b08ad1e100c97dad4f1cda9815f2
https://pubmed.ncbi.nlm.nih.gov/20576065
https://pubmed.ncbi.nlm.nih.gov/20576065
Autor:
V. Temple
Publikováno v:
2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551).
Silicon power has developed an advanced "Super"-GTO or SGTO by adapting the processes of an IC foundry to fabricate high voltage GTO's. Using our patented "thinPak" technology we were able to make low impedance contact to gate and cathodes at a cell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56f3c1fda3d0125b1e3d546589dd97ac
https://doi.org/10.1109/pesc.2004.1355816
https://doi.org/10.1109/pesc.2004.1355816
Autor:
T. Hansen, G. Storaska, Rowland C. Clarke, K. Elliott, J. Zingaro, Andris Ezis, D. Hits, S. Van Campen, K. Roe, Mark E. Thompson, V. Temple
Publikováno v:
Proceedings. IEEE Lester Eastman Conference on High Performance Devices.
In this paper, we report on asymmetric SiC GTOs (gate turn-off thyristors), fabricated at Northrop Grumman with the assistance of Silicon Power Co. A module containing six 1 mm/spl times/1 mm GTOs connected in parallel has demonstrated 100 A of switc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83c4f5a4c15929c1bde129da8a106fad
https://doi.org/10.1109/lechpd.2002.1146732
https://doi.org/10.1109/lechpd.2002.1146732
Autor:
William Andrew Hennessy, M. Ghezzo, Michael S. Adler, C. S. Korman, H.-R. Chang, K. Shenai, V. Temple
Publikováno v:
International Technical Digest on Electron Devices.
Optimum low-voltage silicon power MOSFET technologies with forward conductivities approaching the silicon limit are presented. Vertical scaled trench power MOSFETs with measured performances of V/sub DB/=55 V (R/sub sp/=0.2 m Omega -cm/sup 2/, k/sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8c36c0b47d5fabd3967ebdb791d3bd7
https://doi.org/10.1109/iedm.1990.237042
https://doi.org/10.1109/iedm.1990.237042
Publikováno v:
Proceedings of 1995 IEEE Applied Power Electronics Conference and Exposition - APEC'95.
This paper characterizes switching losses of 600 V generation-1 and generation-2 P-MCT (MOS controlled thyristors) devices. These devices, packaged in TO-218 and TO-247, are rated at 75 A for continuous current at 90/spl deg/C case temperature. By op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66e6010e4d48966afd9e0312e4aec78f
https://doi.org/10.1109/apec.1995.469104
https://doi.org/10.1109/apec.1995.469104