Zobrazeno 1 - 2
of 2
pro vyhledávání: '"V. T. Shandarovich"'
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 7, Pp 55-62 (2020)
The use of microelectronic products in outer space is possible if protection is provided against special external influencing factors, including radiation effect. For digital integrated circuits manufactured using submicron CMOS processes, the greate
Externí odkaz:
https://doaj.org/article/991d6f1a5d11414ebeb19989a8bebc80
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 3, Pp 72-80 (2020)
The self-heating effect is a major problem for gallium nitride electronic, optoelectronic and photonic devices. Average temperature increase and non-uniform distribution of dissipated power in the gallium nitride high electron mobility transistor lea
Externí odkaz:
https://doaj.org/article/4a94fadbedb649edb84477dbbb80f376