Zobrazeno 1 - 10
of 56
pro vyhledávání: '"V. Suntharalingam"'
Akademický článek
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Autor:
J.L. Gray, John H. Scofield, James R. Sites, T. M. Peterson, D. Tarrant, V. Suntharalingam, Alan E. Delahoy, F. R. Shapiro, R. Menner, B. Baso, J. Phillips, S. Wiedeman, Stephen J. Fonash, T. Walter, Angus Rockett, William N. Shafarman, John R. Tuttle, P. Singh
Publikováno v:
Progress in Photovoltaics: Research and Applications. 3:89-104
This contribution is a summary of a workshop convened to discuss the characterization and modeling of thin-film CuInSe2(CIS)-based solar cells, 17-19 October 1993, in Estes Park, Colorado. the participants of the workshop are the authors of this pape
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::485952b0ec760c8a6283478fbec72a3e
https://doi.org/10.1002/pip.4670030202
https://doi.org/10.1002/pip.4670030202
Akademický článek
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Autor:
C.K. Chen, C.L. Chen, P.W. Wyatt, P. Gouker, J.A. Burns, D.R.W. Yost, V. Suntharalingam, C.L. Keast
Publikováno v:
2003 IEEE International Conference on SOI.
In this paper, we have identified and corrected two different mechanisms giving rise to low threshold parasitic channels and subthreshold shoulders in our FDSOI process. PMOS shoulders resulting from local gate penetration were eliminated by incorpor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b80576cd3ed386e5739df49ad60ae218
https://doi.org/10.1109/soi.2003.1242889
https://doi.org/10.1109/soi.2003.1242889
Publikováno v:
Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9).
The objective of this paper is to demonstrate how computer simulations can be used to determine the best payback when the improvement of solar cell efficiency is sought. For this demonstration, modeling work has been undertaken to examine how the mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87b5ed9cd6be99127956dd4235552fcd
https://doi.org/10.1109/pvsc.1993.346987
https://doi.org/10.1109/pvsc.1993.346987
Autor:
S.J. Fonash, V. Suntharalingam
Publikováno v:
1996 54th Annual Device Research Conference Digest.
Recently, we reported the first observations of an electrically reversible depassivation/passivation phenomenon in hydrogen passivated polycrystalline silicon and presented a model for it based on hydrogen release and drift. Here we show our latest f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::401c370788a063f898489aebfbe9f441
https://doi.org/10.1109/drc.1996.546320
https://doi.org/10.1109/drc.1996.546320
Publikováno v:
Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).
The Analysis of Microelectronic and Photonic Structures (AMPS) computer program was used to study the influence of the p/i interface layer an stabilized (p)a-SiC:H/(i) a-Si:H/(n) /spl mu/c-Si heterojunction solar cell performance. The band gap, defec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b04d2289956cef0e3925cc41d733a71
https://doi.org/10.1109/wcpec.1994.520037
https://doi.org/10.1109/wcpec.1994.520037
Publikováno v:
Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays.
Electrical stress testing of polysilicon TFTs is a very valuable tool for addressing concerns about device reliability and stability. We have examined two distinct bias stresses on ECR and RF hydrogenated polysilicon TFTs and have compared the degrad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61508c93becd38c6955e3b79c7679583
https://doi.org/10.1109/amlcd.1995.540971
https://doi.org/10.1109/amlcd.1995.540971
Autor:
David K. Astolfi, Chenson Chen, T. Forte, D. Yost, M. Fritze, Susan G. Cann, V. Suntharalingam
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:191
Sub-100 nm gates are fabricated for fully depleted silicon-on-insulator complementary metal–oxide semiconductor transistor and circuit fabrication using optical lithography and a high density, transformer coupled plasma etch process. The antireflec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c3cf47151d75169b8e225bcbea95bd3
https://doi.org/10.1116/1.1431953
https://doi.org/10.1116/1.1431953
Autor:
Chenson Chen, H. Y. Liu, P. W. Wyatt, David K. Astolfi, V. Suntharalingam, D. Preble, M. Fritze
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17:345
Sub-100 nm metal–oxide–semiconductor field effect transistor gate structures have been fabricated using resolution-enhanced 248 nm optical lithography. We employed the chromeless phase-shift approach together with thin resists and optimized etche
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::910f8672d606e9f9034889d38a9a9046
https://doi.org/10.1116/1.590561
https://doi.org/10.1116/1.590561