Zobrazeno 1 - 10 of 116 pro vyhledávání: '"V. Stambouli"'
1
Akademický článek
Optimum Functionalization of Si Nanowire FET for Electrical Detection of DNA Hybridization
Autor: R. Midahuen, B. Previtali, C. Fontelaye, G. Nonglaton, V. Stambouli, S. Barraud
Publikováno v: IEEE Journal of the Electron Devices Society, Vol 10, Pp 575-583 (2022)
In this work, we demonstrate a wafer-scale fabrication of biologically sensitive Si nanowire FET for pH sensing and electrical detection of deoxyribonucleic acid (DNA) hybridization. Based on conventional “top-down” CMOS compatible technology, ou
Externí odkaz: https://doaj.org/article/844e17eaa3994d1686e0ba103e6aac99
Zobrazit plný text záznamu
2
Wafer-scale fabrication of biologically sensitive Si nanowire FET: from pH sensing to electrical detection of DNA hybridization
Autor: G. Nonglaton, Bernard Previtali, V. Stambouli, R. Midahuen, Sylvain Barraud, C. Fontelaye
Publikováno v: ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference (ESSCIRC)
ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference (ESSCIRC), Sep 2021, Grenoble, France. pp.175-178, ⟨10.1109/ESSCIRC53450.2021.9567751⟩
ESSCIRC
In this work, a wafer-scale fabrication of biologically sensitive Si nanowire FET is demonstrated for pH sensing and electrical detection of DNA hybridization. Based on conventional “top-down” CMOS compatible technology, our bioFETs explore a wid
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27d484172075dc43e38746d1b3160452
https://hal.archives-ouvertes.fr/hal-03429205
Zobrazit plný text záznamu
3
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
5
Growth of cubic boron nitride films by ibad and triode sputtering: development of intrinsic stress
Autor: V Stambouli, M. A. Djouadi, S. Ilias, S. Khandozhko, Vincent Mortet
Publikováno v: Diamond and Related Materials. 10:2167-2173
Two methods are employed to evidenced the stress behavior in c-BN films. On the one hand, in depth stress profile of c-BN film, deposited by ion beam assisted evaporation, was performed by recording infrared spectra and substrate curvature after reac
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::77db71d865c65bcf6efdc1777c6cfa58
https://doi.org/10.1016/s0925-9635(01)00498-8
Zobrazit plný text záznamu
6
Study of stress and infra-red absorption line of BN films containing various fractions of cubic phase
Autor: Gerard Nouet, V. Stambouli, Daniel Bouchier, S. Ilias
Publikováno v: Diamond and Related Materials. 9:1867-1875
This paper focuses on the stress dependence of infrared absorption lines of BN films synthesized by ion beam assisted deposition (IBAD) and containing various fractions of cubic phase. The compressive stress ranges from −3 to –11 GPa and is found
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::349ed6310054335e29687e51744083a0
https://doi.org/10.1016/s0925-9635(00)00336-8
Zobrazit plný text záznamu
7
Evidence for the layered structure of c-BN films by in situ REELS analyses and depth profiling
Autor: S Ilias, Daniel Bouchier, V. Stambouli
Publikováno v: Applied Surface Science. 152:70-76
In situ Reflection Electron Energy Loss Spectroscopy (REELS) analyses, performed at various primary electron energies, enable us to distinguish between sp 3 and sp 2 bonding in BN films. Consequences on the c-BN growth modelling are discussed based o
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7c2acad6318e28972a6606b591d90b7d
https://doi.org/10.1016/s0169-4332(99)00304-9
Zobrazit plný text záznamu
8
Structure investigation of BN films grown by ion-beam-assisted deposition by means of polarised IR and Raman spectroscopy
Autor: D. Bouchier, Gerard Nouet, Narcis Mestres, Vincent Mortet, M. Ben el Mekki, E. Guiot, M.A. Djouadi, V. Stambouli, J. Pascallon
Publikováno v: Surface and Coatings Technology. :93-99
We present an optical investigation, by means of polarised infrared (IR) spectroscopy and Raman scattering, of the microstructure and crystallinity of mixed films of hexagonal and cubic boron nitride (h-BN and c-BN, respectively). The films were depo
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::06c89df684253995cb377cf0ab2b7842
https://doi.org/10.1016/s0257-8972(99)00185-1
Zobrazit plný text záznamu
9
Deposition of c-BN films on diamond: influence of the diamond roughness
Autor: V. Stambouli, J. Pascallon, Gerard Nouet, Daniel Bouchier, A Gicquel, S. Ilias, F. Silva
Publikováno v: Materials Science and Engineering: B. 59:239-243
Diamond films deposited on Si substrates by Plasma Enhanced Chemical Vapor Deposition (PECVD) were used as substrates for c-BN thin film deposition. The c-BN films were deposited at 400°C by Ion Beam Assisted Deposition (IBAD) using a mixture of nit
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::571647ed9d56b84f99be379ca0f9c77f
https://doi.org/10.1016/s0921-5107(98)00374-2
Zobrazit plný text záznamu
10
Microstructure of c-BN thin films deposited on diamond films
Autor: Daniel Bouchier, Gerard Nouet, Alix Gicquel, S. Ilias, F. Silva, V. Stambouli, J. Pascallon
Publikováno v: Diamond and Related Materials. 8:325-330
Diamond films were used as substrates for cubic boron nitride (c-BN) thin film deposition. The c-BN films were deposited by ion beam assisted deposition (IBAD) using a mixture of nitrogen and argon ions on diamond films. The diamond films exhibiting
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6c033bc4c840886f27b4b7cad9da3726
https://doi.org/10.1016/s0925-9635(98)00362-8
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje