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Diamond as substrate for 3C-SiC growth: A TEM study

Autor: Gabriel Ferro, Mickael Rebaud, Fernando Lloret, M.P. Villar, Daniel Araujo, Jose Carlos Piñero, A. Vo-Ha, Davy Carole, Etienne Gheeraert, V. Souliere

Publikováno v: physica status solidi (a). 211:2302-2306

Vapor–liquid–solid (V–L–S) growth of SiC on (100) diamond substrate is reported. The crystalline quality is evaluated by transmission electron microscopy (TEM). Diffraction contrast (CTEM) observations allowed confirming the growth of fully l

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3973c8d8ca229bc02076701d763814d9
https://doi.org/10.1002/pssa.201431179

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Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport

Autor: Christian Brylinski, Dominique Planson, Dominique Tournier, François Cauwet, Mihai Lazar, Arthur Vo-Ha, Gabriel Ferro, Pierre Brosselard, Nicolas Thierry-Jebali, Davy Carole, V. Souliere

Publikováno v: Thin Solid Films
Thin Solid Films, Elsevier, 2013, 548, pp.125-129. ⟨10.1016/j.tsf.2013.09.030⟩

International audience; The present study reports the fabrication of localized p-doped silicon carbide zones on 4H-SiC substrate. Selective epitaxial growth of p-doped SiC was performed using the vapour–liquid–solid transport in Al–Si liquid ph

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6bf98172455a7d90fc6d75d8ae616aec
https://doi.org/10.1016/j.tsf.2013.09.030

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Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition

Autor: Michael Krieger, Svetlana Beljakowa, Heiko B. Weber, V. Souliere, Tomasz Sledziewski, Pawel Kwasnicki, Gabriel Ferro, Fabrizio Roccaforte, Filippo Giannazzo, Thierry Chassagne, Roxana Arvinte, Hervé Peyre, Marcin Zielinski, Kassem Alassaad, Sandrine Juillaguet, Marilena Vivona

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2016, 120 (20), pp.205701. ⟨10.1063/1.4967301⟩
Journal of applied physics 120 (2016): 205701-1–205701-7. doi:10.1063/1.4967301
info:cnr-pdr/source/autori:Sledziewski T.; Vivona M.; Alassaad K.; Kwasnicki P.; Arvinte R.; Beljakowa S.; Weber H.B.; Giannazzo F.; Peyre H.; Souliere V.; Chassagne T.; Zielinski M.; Juillaguet S.; Ferro G.; Roccaforte F.; Krieger M./titolo:Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition/doi:10.1063%2F1.4967301/rivista:Journal of applied physics/anno:2016/pagina_da:205701-1/pagina_a:205701-7/intervallo_pagine:205701-1–205701-7/volume:120

The effect of germanium (Ge) on n-type 4H-SiC is experimentally studied by electrical characterization of homoepitaxial layers grown by chemical vapor deposition (CVD). Measurements show that electrical properties of epitaxial layers can be changed b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21858adb324677514424954d5e198c60
https://hal.archives-ouvertes.fr/hal-01440539

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4H-SiC(0001) Surface Faceting during Interaction with Liquid Si

Autor: Gabriel Ferro, Olivier Dezellus, V. Souliere, Judith Woerle, Davy Carole, Ulrike Grossner, Massimo Camarda

Publikováno v: Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.163-166. ⟨10.4028/www.scientific.net/MSF.858.163⟩
Materials Science Forum, 858
Silicon Carbide and Related Materials 2015

The aim of this study was to find conditions allowing the "natural" formation of a regular and controllable step bunched morphology on a 4H-SiC seed without the need of any SiC deposition. This was performed by melting a bulk piece of Si on a 4°off

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65cdf2380a27c0b5545c635e33c26648
https://hal.archives-ouvertes.fr/hal-02735337

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Vapor–Liquid–Solid Growth of 3C-SiC on α-SiC Substrates. 2. Growth Kinetics

Autor: Nada Habka, Olivier Kim-Hak, Bilal Nsouli, Maher Soueidan, V. Souliere, Gabriel Ferro

Publikováno v: Crystal Growth & Design. 8:1051-1054

The growth kinetics of 3C-SiC heteroepitaxial layers on α-SiC substrates by a vapor–liquid–solid (VLS) mechanism in Ge-Si melts was investigated. Various parameters were studied such as temperature, melt composition, crucible inner diameter, pro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5752bc38a43247cc2a5fd8eb01288791
https://doi.org/10.1021/cg701146m

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Evidence for Flat Bands near the Fermi Level in Epitaxial Rhombohedral Multilayer Graphene

Autor: Gilles Patriarche, Thomas Brumme, Haikel Sediri, Mathieu G. Silly, Mahdi Hajlaoui, Fausto Sirotti, Gabriel Ferro, Matteo Calandra, V. Souliere, Massimiliano Marangolo, Jean-Christophe Girard, Debora Pierucci, E. Velez-Fort, Abdelkarim Ouerghi, Francesco Mauri

Publikováno v: ACS Nano
ACS Nano, 2015, 9 (5), pp.5432-5439. ⟨10.1021/acsnano.5b01239⟩
ACS Nano, American Chemical Society, 2015, 9 (5), pp.5432-5439. ⟨10.1021/acsnano.5b01239⟩

International audience; The stacking order of multilayer graphene has a profound influence on its electronic properties. In particular, it has been predicted that a rhombohedral stacking sequence displays a very flat conducting surface state: the lon

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09adac2bc4166b2ac331197e6a10aae0
https://hal.science/hal-01240494

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Control of epitaxial layers grown on 4H-SiC: from 3C microcrystalline inclusions to type II quantum well structures

Autor: V. Souliere, Yves Monteil, Jean Camassel, Carole Balloud, C. Sartel, Sandrine Juillaguet

Publikováno v: physica status solidi (a). 202:593-597

We report the results of a series of LTPL (Low Temperature PhotoLuminescence) investigation performed on n-type, non-intentionally doped, 4H-SiC samples. We focus on the defect structure introduced by a growth fault in the stacking sequence. We treat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::94388cfc86dc4f250c2ebedfc96815c7
https://doi.org/10.1002/pssa.200460435

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Control of Al-doping in 4H-SiC homo-epitaxial layers grown with a HMDS/TMA/P mixture

Autor: V. Souliere, C. Sartel, L. Smith, Yves Monteil, Jean Camassel, Marcin Zielinski, S A Rushworth

Publikováno v: physica status solidi (a). 202:550-554

We report on the growth of thin, aluminium doped, homo-epitaxial layers of 4H-SiC using a threefold mixture of purified hexamethyldisilane (HMDS) admixted with propane (P) and trimethylaluminium (TMA). The growth has been performed in an AP-CVD, cold

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::73e0d615ed2705cdf7bf95b3590b8814
https://doi.org/10.1002/pssa.200460419

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Technical aspects of 〈$ \bf 11\bar 20 $〉 4H-SiC MOSFET processing

Autor: Caroline Le Blanc, Marcin Zielinski, Sandrine Juillaguet, Sylvie Contreras, Yves Monteil, V. Souliere, Dominique Tournier, Phillippe Godignon, Jean Camassel

Publikováno v: physica status solidi (a). 202:680-685

In order to process n-type channel MOSFETs on (1120)-oriented 4H-SiC wafers one has to optimise, independently, many different steps. First is the growth of the active epitaxial layer, including the effect of p-type doping. Next is the oxidation and,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9c821779eea2c51576b9b54a84693463
https://doi.org/10.1002/pssa.200460473

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