Contamination by slow diffusers in ion implantation processes: The examples of molybdenum and tungsten

Autor: I. Mica, Maria Luisa Polignano, A. Galbiati, V. Soncini, S. Grasso, F. Barbarossa

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :164-171

A procedure to measure molybdenum and tungsten contamination in implantation processes by DLTS (Deep Level Transient Spectroscopy) is defined and calibrated for the evaluation of molybdenum and tungsten contaminant dose. The obtained calibrations are

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e7f356eb991ec7fe2fc22da840196945
https://doi.org/10.1016/j.nimb.2015.04.069

SiO2 etch rate modification by ion implantation

Autor: E. Bellandi, V. Soncini

Publikováno v: Thin Solid Films. 524:75-80

The structural damage of silicon dioxide films produced by different ion species has been studied by etch rate profiling. The etch rate showed a good correlation with the damage estimated by a simulation software. The etch rate increases almost linea

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6419f4b6f9accc6c0a439da97022ca6f
https://doi.org/10.1016/j.tsf.2012.09.060

Application of atomic force microscopy to detect edge of mask contaminations that may hinder titanium silicide formation

Autor: M. Pesaturo, Camillo Bresolin, P. Paruzzi, Davide Erbetta, V. Soncini, M. Bigi

Publikováno v: Microelectronic Engineering. 70:196-200

An atomic force microscope (AFM) was used to study anomalies in the titanium disilicide formation of narrow (0.26 µm) poly lines at the edge of n+ and p+ implant masks; a special test structure was designed both for morphological and electrical eval

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e78287bbe3f2bde6f561062e0086009c
https://doi.org/10.1016/s0167-9317(03)00376-9

Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis

Autor: Konstantinos Beltsios, D. Skarlatos, Marzia Carrada, Caroline Bonafos, Dimitris Tsoukalas, Pascal Normand, Nikolay Cherkashin, Gérard Benassayag, M. Ameen, Panagiotis Dimitrakis, V. Soncini, Alain Claverie, E. Kapetanakis, A. Agarwal, Ch. Sohl

Publikováno v: Microelectronic Engineering
Microelectronic Engineering, 2003, 67-68, pp.629-634. ⟨10.1016/S0167-9317(03)00124-2⟩
Microelectronic Engineering, Elsevier, 2003, 67-68, pp.629-634. ⟨10.1016/S0167-9317(03)00124-2⟩
Microelectronic Engineering, Elsevier, 2003, 67-68, pp.629-634. 〈10.1016/S0167-9317(03)00124-2〉

The structural and electrical characteristics of thin silicon dioxide layers with embedded Si nanocrystals are reported fabricated by low-energy silicon implantation and with subsequent annealing in inert and diluted oxygen. Thermal treatment in dilu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa98b607fa845a5aa2916d9d335251f8
https://doi.org/10.1016/s0167-9317(03)00124-2

Extended defect generation by Xenon implantation in silicon

Autor: A. G. Mauri, I. Mica, Davide Codegoni, K. Vad, V. Soncini, Maria Luisa Polignano, C. Pozzi, P. Targa, S. Grasso

Publikováno v: AIP Conference Proceedings.

We investigate the behavior of the Xe in the Si lattice re-growth after the implantation, varying the temperature of the annealing (750-1100°C) and the Xe dose. The Xe is implanted alone or with the species generally used to form the junction in VLS

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::116d63fd4974b7747996a4544acdeaec
https://doi.org/10.1063/1.4865606