Zobrazeno 1 - 10
of 34
pro vyhledávání: '"V. Serru"'
Autor:
E. Richard, T. Huet, H. Moula Karimdjy, M. Camiade, C. Chang, V. Serru, F. Fernandez, J. Suedois, I. Davies, V. Valenta
Publikováno v:
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022.
Autor:
G. Le Rhun, B. Gerfault, T. Huet, V. Serru, M. Dinari, E. Richard, Gregory Mouchon, L. Brunel, L. Marechal, Marc Camiade, Christophe Chang
Publikováno v:
2019 14th European Microwave Integrated Circuits Conference (EuMIC).
This paper describes the design methodology and characterization of a 10W K Band packaged amplifier for space applications. The MMIC was developed on the new UMS $0.15 \mu\mathrm{m}$ gate length GaN technology on SiC substrate as the final stage of a
Autor:
A.M. Couturier, Marc Camiade, P. Chaumas, S. Heckmann, J.J. Fontecave, Stéphane Piotrowicz, T. Huet, J.P. Viaud, V. Serru
Publikováno v:
2007 IEEE/MTT-S International Microwave Symposium.
A monolithic two stages high power, high efficiency and high robustness amplifier was developed for X-band applications. The combination of the improvement of the UMS HBT process called HB20P (GalnP/GaAs) in term of breakdown, the consideration of mi
Publikováno v:
33rd European Microwave Conference, 2003.
Modern remote sensing systems and radars are more and more based on electronically steered antennas. Instead of using one high power tube, each radiating element must contain a full T/R module allowing an individual modulation of amplitude and phase
Publikováno v:
33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C).
Publikováno v:
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.
Using conventional 0.25 /spl mu/m HEMT (VLN02 process) and pseudomorphic 0.15 /spl mu/m HEMT (MM015 process), a highly integrated and low power consumption receiver has been developed for a W-band radiometer. All the millimeter-wave functions and eve
Publikováno v:
2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096).
The power PHEMT technology presented allows one to achieve high power (35.5 dBm) and PAE (60%) for a low drain bias of 3.5 volts and a gate bias of zero volts. For such operating conditions, analyses are conducted to adjust the load termination at th
Autor:
V. Serru, M. Camiade
Publikováno v:
1994 24th European Microwave Conference.
A set of single chip multifunctions has been developed at X band for sensor applications. This kind of circuits gathers all the necessary basic functions such as oscillators, buffer amplifiers, power dividers, modulators and mixers. The chosen techno
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Conference
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