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pro vyhledávání: '"V. S. Volcheck"'
Autor:
V. S. Volcheck, V. R. Stempitsky
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 22, Iss 3, Pp 69-75 (2024)
A simulation procedure for analyzing the electrical and optical characteristics of an AlGaN/GaN intersubbandquantum well middle-wavelength infrared photodetector is presented. The photoconductive gain spectrumwas simulated by coupling the drift-diffu
Externí odkaz:
https://doaj.org/article/2bec6bff899849a2961909fb2cdf380d
Autor:
V. S. Volcheck, V. R. Stempitsky
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 20, Iss 1, Pp 40-47 (2022)
The self-heating effect exerts a considerable influence on the characteristics of high-power electronic and optoelectronic devices based on gallium nitride. An extremely non-uniform distribution of the dissipated power and a rise in the average tempe
Externí odkaz:
https://doaj.org/article/26bbe57c5e754a5da5c10bcca22ce9f7
Autor:
V. S. Volcheck, V. R. Stempitsky
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 19, Iss 6, Pp 74-82 (2021)
The self-heating effect poses a main problem for high-power electronic and optoelectronic devices based on gallium nitride. A non-uniform distribution of the dissipated power and a rise of the average temperature inside the gallium nitride heterostru
Externí odkaz:
https://doaj.org/article/4002ff597aca4505943cf51312911f19
Autor:
V. S. Volcheck, V. R. Stempitsky
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 8, Pp 62-68 (2020)
A significant rise in the mass production of products that contain nanoparticles is of growing concern due to the detection of their toxic effects on living organisms. The standard method for analyzing the toxicity of substances, including nanomateri
Externí odkaz:
https://doaj.org/article/cbb0dbb2a6724b10b42c6ecf2460c542
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 3, Pp 72-80 (2020)
The self-heating effect is a major problem for gallium nitride electronic, optoelectronic and photonic devices. Average temperature increase and non-uniform distribution of dissipated power in the gallium nitride high electron mobility transistor lea
Externí odkaz:
https://doaj.org/article/4a94fadbedb649edb84477dbbb80f376
Publikováno v:
Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series. 67:285-297
This paper reviews the theoretical and experimental works concerning one of the most important parameters of wurtzite gallium nitride – thermal conductivity. Since the heat in gallium nitride is transported almost exclusively by phonons, its therma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bc5f645c7375850f869fbfabcfc4a87
https://doi.org/10.29235/1561-8358-2022-67-3-285-297
https://doi.org/10.29235/1561-8358-2022-67-3-285-297
Autor:
V S Volcheck, V R Stempitsky
Publikováno v:
Journal of Physics: Conference Series; 2017, Vol. 917 Issue 8, p1-1, 1p