Zobrazeno 1 - 10
of 15
pro vyhledávání: '"V. S. Vidyarthi"'
Autor:
Radim Beranek, Alfred Ludwig, Alan Savan, Dennis König, Kirill Sliozberg, Wolfgang Schuhmann, V. S. Vidyarthi, Martin R. Hofmann
Publikováno v:
International Journal of Hydrogen Energy. 36:4724-4731
Polycrystalline WO3 thin films were fabricated by reactive magnetron sputtering at a substrate temperature of 350 °C under different Ar/O2 gas pressures. In order to study the thickness dependence of photoelectrochemical (PEC) behavior of WO3, the t
Autor:
S. Sadighi, N. Lundy, S. Guo, Shahid Rauf, Jun-Chieh Wang, Phillip J. Stout, Wei Tian, G. S. Sandhu, Jason A. Kenney, Sumeet C. Pandey, T. Zhou, V. S. Vidyarthi, J. Guo, K. Delfin
Publikováno v:
Plasma Sources Science and Technology. 27:094003
A coupled plasma???feature scale model is employed to investigate the etching of high aspect ratio (HAR) silicon (Si) structures using a cyclic multi-step pulsed plasma process in an inductively coupled plasma (ICP) reactor. This process sequence inc
Autor:
Dirk C. Meyer, R. Grötzschel, V. S. Vidyarthi, Gunnar Suchaneck, Alexandr A. Levin, Gerald Gerlach
Publikováno v:
Thin Solid Films. 518:4106-4112
Radio frequency reactive magnetron sputtering from a composite target made of PbO pellets uniformly positioned on a metallic Ba disc has been utilized for BaPbO 3 electrode deposition on 150 mm Si wafers. The reactive sputtering process has been anal
Publikováno v:
Ferroelectrics. 390:145-152
Highly (111) oriented PbZr 0.40 Ti 0.60 O 3 (PZT) thin films have been fabricated on BaPbO 3 /Pt electrodes by a multi-target reactive sputtering. The growth characteristics of the PZT films have been found to be highly influenced by the BaPbO 3 thic
Autor:
Dirk C. Meyer, Gerald Gerlach, M. Reibold, Alexandr A. Levin, V. S. Vidyarthi, Gunnar Suchaneck
Publikováno v:
Ferroelectrics. 370:104-112
In this work, we give evidences of Ruddlesden-Popper (RP) phase formation in Pb(Zr,Ti)O 3 thin films deposited by multi-target reactive sputtering at a substrate temperature of 520°C onto oxidized silicon wafers comprising a ZrO 2 buffer layer. X-ra
Autor:
I. L. Kislova, Gerald Gerlach, Alexander V. Solnyshkin, O. Mieth, V. S. Vidyarthi, Gunnar Suchaneck
Publikováno v:
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 54:2555-2561
In this work, a ferroelectric domain-enhanced electron emission mechanism is proposed. The polarization distribution near 90 degrees domain walls is calculated by solving a set of second order differential equations, including the Poisson's one and e
Autor:
V. S. Vidyarthi, Gunnar Suchaneck, M. Reibold, A. Deyneka, Johannes Hartung, Lubomir Jastrabik, Gerald Gerlach
Publikováno v:
Journal of Electroceramics. 20:17-20
Pb(Zr,Ti)O3 (PZT) thin films deposited on insulating ZrO2 buffered silicon wafer are intended to be employed for in-plane polarized piezoelectric MEMS devices. Multi-target reactive sputtering system for large area deposition of in-situ crystallized
Publikováno v:
Thin Solid Films. 515:3547-3553
Reactive sputtering from three metallic targets (Ti, Zr, and Pb) in O 2 and Ar gas mixture was utilized to deposit in-situ crystallized Pb(Zr,Ti)O 3 (PZT) thin films onto ZrO 2 buffered 6″ Si-wafers. The plasma emission control of reactive sputteri
Publikováno v:
Journal of the European Ceramic Society. 27:3789-3792
Beyond target diameters of 100 mm, multi-target reactive sputtering becomes a promising technology for ferroelectric thin film deposition. The main advantages of multi-target sputtering technology are: (i) thin films with precise composition control,
Autor:
I. L. Kislova, T. Otto, Gerald Gerlach, H Klumbies, Alexander V. Solnyshkin, R. Reichenbach, Lukas M. Eng, G. Milde, V. S. Vidyarthi, Gunnar Suchaneck, O. Mieth
Publikováno v:
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics.
In this work ferroelectric domain enhanced electron emission mechanisms are proposed. The polarization distribution near 90deg domain walls is calculated by solving a set of second order differential equations including the Poisson's one and equation