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pro vyhledávání: '"V. S. Tulovchikov"'
Autor:
V. S. Tulovchikov, A. A. Nikolskaya, David Tetelbaum, Yu. A. Mendeleva, A. V. Stepanov, E. V. Kuril’chik
Publikováno v:
Technical Physics. 64:1350-1356
An effect has been discovered that irradiation of a silicon sample by light changes the properties of another silicon sample several centimeters away from the former. This effect is observed if the samples are in contact with a fluoroplastic–NaCl a
Autor:
E. S. Zharkov, V. S. Tulovchikov
Publikováno v:
Inorganic Materials. 37:1118-1120
The nonuniform distributions of defects and impurities, as well as polishing damage, have a profound effect on the secondary-defect formation in InSb single crystals during ion implantation. The spectral dependences of photoconductance of ion-implant