Zobrazeno 1 - 10
of 51
pro vyhledávání: '"V. S. Teodorescu"'
Publikováno v:
2022 International Semiconductor Conference (CAS).
Publikováno v:
2021 International Semiconductor Conference (CAS).
Deposition of Ge nanoparticles in Si 3 N 4 films by heating Si and quartz substrates at 500 °C were obtained using co-sputtering Ge, and Si3N4. Their structure and photo-electrical behaviour were investigated by transmission electron microscopy, cur
Autor:
V. S. Teodorescu, I. Dascalescu, T. Stoica, A. Slav, O. Cojocaru, Sorina Iftimie, Ana-Maria Lepadatu, Magdalena Lidia Ciurea, C. Palade
Publikováno v:
2020 International Semiconductor Conference (CAS).
The 1600 nm-extended SWIR photoresponse of SiGe/TiO 2 multilayers with Ge-rich SiGe nanocrystals (NCs) is demonstrated. The SiGe NCs based multilayers are obtained by magnetron sputtering deposition of TiO 2 / 6x(Ge/SiGe/Ge/TiO 2 ) layers on heated p
Autor:
M, Dragoman, A, Dinescu, D, Dragoman, C, Palade, A, Moldovan, M, Dinescu, V S, Teodorescu, M L, Ciurea
Publikováno v:
Nanotechnology. 31(49)
In this paper we report a set of experiments at the wafer level regarding field-effect transistors with a graphene monolayer channel transferred on the ferroelectric HfO
Autor:
Ana-Maria Lepadatu, Sorina Lazanu, V. S. Teodorescu, Toma Stoica, C. Palade, Magdalena Lidia Ciurea, A. Slav
Publikováno v:
Applied Surface Science. 428:698-702
Trilayer memory capacitors with Ge nanocrystals (NCs) floating gate in HfO 2 were obtained by magnetron sputtering deposition on p-type Si substrate followed by rapid thermal annealing at relatively low temperature of 600 °C. The frequency dispersio
Autor:
Magdalena Lidia Ciurea, I. Lalau, P. Prepelita, O. Cojocaru, Ionel Stavarache, V. S. Teodorescu
Publikováno v:
2019 International Semiconductor Conference (CAS).
Films of amorphous Ge nanoparticles in S$i_{3}N_{4}$ on heated Si and quartz substrates at 300°c were obtained by co-sputtering Ge, and S$i_{3}N_{4}$. The films structure and photo-electrical behaviour were studied through transmission electron micr
Autor:
C, Palade, A, Slav, A M, Lepadatu, I, Stavarache, I, Dascalescu, A V, Maraloiu, C, Negrila, C, Logofatu, T, Stoica, V S, Teodorescu, M L, Ciurea, S, Lazanu
Publikováno v:
Nanotechnology. 30(44)
Trilayer memory capacitors of control HfO
Publikováno v:
Nanotechnology. 30(36)
SiGe nanoparticles dispersed in a dielectric matrix exhibit properties different from those of bulk and have shown great potential in devices for application in advanced optoelectronics. Annealing is a common fabrication step used to increase crystal
Autor:
V. S. Teodorescu, Ionel Stavarache, I. Dascalescu, Valentin Adrian Maraloiu, L. Nedelcu, Magdalena Lidia Ciurea
Publikováno v:
2018 International Semiconductor Conference (CAS).
The films of SiGe nanocrystals in SiO 2 on Si substrate were obtained by co-sputtering Si, Ge, and SiO 2 followed by rapid thermal annealing. The films structure and morphology together with electrical and photoelectrical properties were studied by x
Autor:
Magdalena Lidia Ciurea, T. Stoica, Monica Enculescu, V. S. Teodorescu, A. Slav, Ana-Maria Lepadatu, Sorina Iftimie, Sorina Lazanu, C. Palade, I. Dascalescu
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-11 (2018)
Si and Ge nanocrystals in oxides are of a large interest for photo-effect applications due to the fine-tuning of the optical bandgap by quantum confinement in nanocrystals. In this work, dense Ge nanocrystals suitable for enhanced photoconduction wer