Výsledky vyhledávání

Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them

Autor: W. V. Lundin, V. S. Sizov, Andrey E. Nikolaev, Yu. G. Musikhin, S. O. Usov, Dagmar Gerthsen, A. V. Sakharov, A. F. Tsatsul’nikov, E. E. Zavarin

Publikováno v: Semiconductors. 45:271-276

Results of studies of hydrogen addition during the growth of thin (∼2–3 nm) InGaN layers on their structural properties and properties of light-emitting structures that contain InGaN/GaN heterostructures in the active region are reported. It is s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0d2a59a59cf5c4605aff5d97a8709e00
https://doi.org/10.1134/s1063782611020230

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Study of tunneling transport of carriers in structures with an InGaN/GaN active region

Autor: James L. Merz, W. V. Lundin, E. E. Zavarin, Andrey E. Nikolaev, V. V. Neploh, V. S. Sizov, A. V. Sakharov, A. F. Tsatsul’nikov, Alexander Mintairov

Publikováno v: Semiconductors. 44:1567-1575

Properties of light-emitting structures with an InGaN/GaN active region emitting in a range of 500–550 nm are studied. Photoluminescence of the structures is studied at various values of external bias and temperature as well as with time resolution

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::132e53f5d898f3717f0845f3507ce559
https://doi.org/10.1134/s1063782610120067

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A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

Autor: V. S. Sizov, M. N. Mizerov, N. V. Kryzhanovskaya, E. E. Zavarin, W. V. Lundin, A. V. Sakharov, A. F. Tsatsul’nikov, A. L. Zakgeim, Andrey E. Nikolaev, M. A. Synitsin, S. O. Usov

Publikováno v: Semiconductors. 44:808-811

A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::94e5ca5237493a4de5ac65488d4d593f
https://doi.org/10.1134/s1063782610060205

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Indium-rich island structures formed by in-situ nanomasking technology

Autor: V. S. Sizov, A. V. Sakharov, W. V. Lundin, A. F. Tsatsul’nikov, Pavel N. Brunkov, E. E. Zavarin, Denis Davydov, V. V. Goncharov

Publikováno v: Technical Physics Letters. 35:1016-1019

A new method of forming InGaN/GaN nanostructures emitting in the long-wavelength green spectral range is proposed and implemented. The method is based on growing a thin InGaN layer over nanosized pits formed in situ by etching a locally AlN-masked Ga

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6b5c3346b501c472daab13baa03ef52a
https://doi.org/10.1134/s1063785009110133

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Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix

Autor: A. V. Sakharov, A. F. Tsatsul’nikov, V. V. Lundin, V. S. Sizov, A. A. Gutkin, Pavel N. Brunkov

Publikováno v: Semiconductors. 43:807-811

Structures with InGaN nanolayers within GaN and AlGaN matrices, which constitute active regions of light-emitting devices, have been studied. Spectra and relative intensities of photoluminescence (PL) in the temperature range 20–300 K and the depen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ed546b2e3e72be05c6f31c5ace31abe2
https://doi.org/10.1134/s1063782609060220

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InGaN nanoinclusions in an AlGaN matrix

Autor: A. F. Tsatsul’nikov, V. V. Lundin, V. S. Sizov

Publikováno v: Semiconductors. 42:788-793

GaN-based structures with InGaN quantum dots in the active region emitting in the near-ultraviolet region are studied. In this study, two types of structures, namely, with InGaN quantum dots in a GaN or AlGaN matrix, are compared. Photoluminescence s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e17e92dcd380e3beaffbd769fc892b5d
https://doi.org/10.1134/s1063782608070075

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INVESTIGATIONS OF InGaN/GaN AND InGaN/InGaN QDS GROWN IN A WIDE PRESSURE MOCVD REACTOR

Autor: A. S. Vlasov, N. N. Ledentsov, Yu. G. Musikhin, Alexander Mintairov, V. S. Sizov, V. V. Lundin, A. F. Tsatsul’nikov, K. Sun, James L. Merz, E. E. Zavarin, D. S. Sizov

Publikováno v: International Journal of Nanoscience. :327-332

InGaN quantum dot (QD) formation in a wide pressure range MOCVD reactor was studied. The existence of QDs and their lateral size (2–5 nm) were demonstrated using transmission electron microscopy and high spatial resolution (~ 100 nm) near-field mag

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::351522a88ec5293aab106b6cd14195a2
https://doi.org/10.1142/s0219581x07004882

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Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots

Autor: Yu. G. Musikhin, Robert A. Suris, V. V. Lundin, A. F. Tsatsul’nikov, D. S. Sizov, E. E. Zavarin, V. S. Sizov, Nikolai N. Ledentsov

Publikováno v: Semiconductors. 41:575-589

Electronic and optical properties of ensembles of quantum dots with various energies of activation from the ground-state level to the continuous-spectrum region were studied theoretically and experimentally with the InGaN quantum dots as an example.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1b30da93bbf9debb212a3478b96d30aa
https://doi.org/10.1134/s1063782607050193

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Localization of non‐equilibrium carriers in deep InGaN quantum dots and its impact on the device performance

Autor: A. F. Tsatsul'nikov, Yu. G. Musikhin, Alexander Mintairov, D. S. Sizov, K. Sun, E. E. Zavarin, James L. Merz, V. S. Sizov, A. S. Vlasov, V. V. Lundin, N. N. Ledentsov

Publikováno v: physica status solidi c. 3:2043-2047

Structural and optical properties of MOCVD grown InGaN quantum dot (QD) layers have been studied using transmission electron microscopy, X-ray diffraction, near-field spectroscopy and selectively excited photoluminescence. We have shown that the pres

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c08bfd4129d11c06168c18a285b48ca6
https://doi.org/10.1002/pssc.200565465

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