Zobrazeno 1 - 10 of 84 pro vyhledávání: '"V. S. Sidorov"'
1
Influence of Low Axial Temperature Gradient on Ga-Doped Germanium Crystal Growth by the Vertical Bridgman Method
Autor: V. S. Sidorov, V. I. Strelov, E. N. Korobeynikova, G. N. Kozhemyakin
Publikováno v: Crystallography Reports. 65:798-804
The influence of a low axial temperature gradient on the growth of the Ge:Ga crystal by the vertical Bridgman technique was investigated. The axial temperature gradient of 3.3 K/cm is shown to provide conditions for polycrystalline growth of Ge:Ga cr
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::970eb12baad0ddca8e7db5ee8f1147f9
https://doi.org/10.1134/s1063774520050132
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2
Investigation of the Influence of Injection Parameters on Particles Motion in Electric and Magnetic Fields for Designing Plasma Separation Technique
Autor: V. P. Tarakanov, N. A. Vorona, R. A. Timirkhanov, R. A. Usmanov, Andrey V. Gavrikov, V. P. Smirnov, V. S. Sidorov, S. D. Kuzmichev
Publikováno v: Plasma Physics Reports. 44:1104-1113
The paper continues studies of the capabilities of plasma treatment of spent nuclear fuel and radioactive waste. The study is devoted to the problem of integration of the plasma source and separator, while the initial conditions of the substance inpu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9ea3f1fbec14db2f0aae2225099fd8b9
https://doi.org/10.1134/s1063780x18120097
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3
Behavior of the Melt in the Vertical Bridgman Method with a Low Axial Temperature Gradient
Autor: E. N. Korobeynikova, V. K. Artemyev, V. S. Sidorov, V. I. Strelov, G. N. Kozhemyakin
Publikováno v: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 12:261-268
The thermal conditions for the growth of Ge crystals with a diameter of 50 mm by the vertical Bridgman method in the case of low thermal-gravitational convection are studied using model experiments. Distilled water being hydrodynamically similar to t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::812f598667979e461e39cd813f7ecc77
https://doi.org/10.1134/s1027451018020118
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4
Development of the Growth Technology of Highly Homogeneous Semiconductor Crystals
Autor: V. N. Vlasov, V. S. Sidorov, I. A. Prokhorov, V. K. Artemyev, V. I. Strelov, E. N. Korobeinikova
Publikováno v: Crystallography Reports. 63:284-286
Different technological solutions for growing GaSb(Te) and Ge(Ga) single crystals, making it possible to optimize the growth of highly homogeneous (at the microlevel) semiconductor crystals by the Bridgman method, are described. The possibility of im
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c750bc3dc440875cf23d2e263ef438ce
https://doi.org/10.1134/s1063774518020281
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5
Growth of high-homogeneity GaSb:Te crystals for thermophotovoltaic energy converters
Autor: I. A. Prokhorov, V. N. Vlasov, N. A. Pakhanov, V. I. Folomeev, V. K. Artem’ev, I. L. Shul’pina, E. N. Korobeinikova, Yu. A. Serebryakov, V. S. Sidorov
Publikováno v: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 8:666-674
Problems concerning the technology of growing highly homogeneous semiconductor crystals are discussed. The dependence between the inhomogeneity of GaSb:Te substrates and the efficiency of thermophotovoltaic converters (TPVCs) fabricated on their base
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::90b1cbcbbad03e4954004a5e6faadbd7
https://doi.org/10.1134/s1027451014040144
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7
Comparative studies of the features of the formation of impurity heterogeneity in GaSb:Te crystals in the case of directed crystallization under space and ground conditions
Autor: E. N. Korobeinikova, V. S. Sidorov, V. N. Vlasov, I. A. Prokhorov, I. L. Shul’pina, Yu. A. Serebryakov
Publikováno v: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 6:604-611
The results of comparative studies concerned with the formation of impurity heterogeneity in GaSb:Te crystals grown at the POLIZON facility by the Bridgman method under space and ground conditions are presented. Crystallization is carried out in the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b774822d6cf7e5282a8625738b95cacc
https://doi.org/10.1134/s1027451012070117
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9
X-ray topography characterization of the structural response of Ge(Ga) crystals to variation in gravity force vector orientation during crystallization
Autor: B. G. Zakharov, V. S. Sidorov, V. I. Strelov, I. A. Prokhorov
Publikováno v: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 3:85-89
The influence of crystallization process disturbances connected with the variation of the crystallization front orientation relative to the gravity force vector (characteristic for crystal growth under conditions of microgravity onboard space vehicle
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b0becb923092e2f6b82e192be71161c0
https://doi.org/10.1134/s1027451009010157
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10
Mathematical modeling and experimental investigation of the effect of temperature gradients on crystallization processes under terrestrial and space conditions
Autor: V. I. Strelov, I. Zh. Bezbakh, B. G. Zakharov, V. S. Sidorov, V. I. Folomeev
Publikováno v: Crystallography Reports. 50:490-498
Mathematical modeling of the processes of heat and mass transfer during directed crystallization under terrestrial and space conditions is performed on the basis of experimental data on the temperature distribution (boundary conditions). Convective p
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::03cb8f24124d857f62c42686ede0970b
https://doi.org/10.1134/1.1927615
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