Zobrazeno 1 - 9
of 9
pro vyhledávání: '"V. S. Senthil Srinivasan"'
Autor:
P. Karkare, Saurabh Lodha, Raju Mandapati, V. S. Senthil Srinivasan, P. Bafna, Abhijit Shripat Borkar, Udayan Ganguly
Publikováno v:
IEEE Transactions on Electron Devices. 60:3385-3392
Recently, we have presented a circuit model of the n-p-n selector, validated by experimentally calibrated TCAD data and implemented in SPICE for cross-point memory array performance analysis. In this paper, we study the array circuit performance duri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5bb82ac9a009cea86d61bc0314e0f8b
https://doi.org/10.1109/ted.2013.2279553
https://doi.org/10.1109/ted.2013.2279553
Autor:
Jörg Schulze, Roman Körner, Daniel Noll, Erich Kasper, Klaus Matthies, Viktor Stefani, V. S. Senthil Srinivasan, Wogong Zhang, Konrad Kostecki, Michael Oehme, Ashraful I. Raju
Publikováno v:
2016 IEEE MTT-S International Wireless Symposium (IWS).
Two different approaches of capacitance-voltage (C-V) measurement were applied to the fabricated single-drift (SD) impact-ionization avalanche transit-time (IMPATT) structures. From both the C-V results, the carrier concentrations of depleted space-c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21f340564c9c54acb3572cc32b761611
https://doi.org/10.1109/ieee-iws.2016.7585419
https://doi.org/10.1109/ieee-iws.2016.7585419
Autor:
V. S. Senthil Srinivasan, A. Pandya
Publikováno v:
Thin Solid Films. 520:574-577
This paper reports the investigation of hafnium oxide based metal-oxide-semiconductor capacitor for the detection of gamma radiation. The fabrication of the device involved deposition of hafnium oxide thin film on n-type Si wafer by electron beam eva
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcb26506f8769f86b2336ab8d8647fc9
https://doi.org/10.1016/j.tsf.2011.07.010
https://doi.org/10.1016/j.tsf.2011.07.010
Autor:
Michael Oehme, V. S. Senthil Srinivasan, C. Pinto Gomez, V. Sangwan, Bhaskar Das, Udayan Ganguly, Joerg Schulze
Publikováno v:
2015 73rd Annual Device Research Conference (DRC).
Low temperature ( on /I off and matched with TCAD results. High J on verifies the high dopant activation at low temperature. Benchmarking with the available selector technologies, J on /J off >104 with voltage designability makes Ge based selector an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e667a3d64b09e81f3ef4686ba336c16
https://doi.org/10.1109/drc.2015.7175689
https://doi.org/10.1109/drc.2015.7175689
Autor:
V. S. Senthil Srinivasan, A. Pandya
Publikováno v:
Radiation Measurements. 44:325-327
MOS (Al/SnO x / n -Si) structure is fabricated by thin film deposition technique for gamma radiation dosimetry. A cumulative gamma dose of 480 Gy was given to the devices in steps of 120 Gy each at the dose-rate of 2 Gy/min. Forward bias I – V char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c97ec45c777f995ee0d3dc16e70730ab
https://doi.org/10.1016/j.radmeas.2009.03.008
https://doi.org/10.1016/j.radmeas.2009.03.008
Autor:
R. Koerner, Joerg Schulze, V. S. Senthil Srinivasan, Anja Hornung, Inga A. Fischer, Michael Oehme, Erlend Rolseth, Konrad Kostecki, Lion Augel
Publikováno v:
Semiconductor Science and Technology. 31:08LT01
As Ge1−x Sn x is being investigated for CMOS applications, obtaining contacts to n-type Ge1−x Sn x with low specific contact resistivity (ρ c) is a major concern. Here, we present results on specific contact resistivities of Sb doped n-type Ge1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be429eb3258c21eb4ad29150652a7f26
https://doi.org/10.1088/0268-1242/31/8/08lt01
https://doi.org/10.1088/0268-1242/31/8/08lt01
Autor:
Bernd Tillack, Martin Gollhofer, H. S. Funk, Stefan Bechler, V. S. Senthil Srinivasan, Michael Oehme, Yuji Yamamoto, Wogong Zhang, Ashraful I. Raju, Jörg Schulze, Roman Körner, Klaus Matthies, Erich Kasper
Publikováno v:
Japanese Journal of Applied Physics. 55:04EF03
Five silicon (Si) p++–n−–n++ samples were grown at various doping concentrations (1.0 × 1017–2.2 × 1017 cm−3) in an n− layer by using the reduced-pressure CVD technique. By using these samples, 30 × 2 µm2 single-drift (SD) impact-ioni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f0d59001a94fa46c7f0113b9d847d1f
https://doi.org/10.7567/jjap.55.04ef03
https://doi.org/10.7567/jjap.55.04ef03
Autor:
V S Senthil Srinivasan, Inga A Fischer, Lion Augel, Anja Hornung, Roman Koerner, Konrad Kostecki, Michael Oehme, Erlend Rolseth, Joerg Schulze
Publikováno v:
Semiconductor Science & Technology; Aug2016, Vol. 31 Issue 8, p1-1, 1p
Autor:
Wogong Zhang, Yuji Yamamoto, Michael Oehme, Klaus Matthies, Ashraful I. Raju, V. S. Senthil Srinivasan, Roman Körner, Martin Gollhofer, Stefan Bechler, Hannes Funk, Bernd Tillack, Erich Kasper, Jörg Schulze
Publikováno v:
Japanese Journal of Applied Physics; Apr2016, Vol. 55 Issue 4s, p1-1, 1p