Zobrazeno 1 - 10
of 179
pro vyhledávání: '"V. S. Lobkov"'
Autor:
A. G. Shmelev, D. K. Zharkov, A. V. Leontyev, V. G. Nikiforov, D. N. Petrov, M. F. Krylov, J. E. Clavijo, V. S. Lobkov
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 86:1463-1466
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0620b3c0ed4bc693e191b6115104bd3d
https://doi.org/10.3103/s1062873822120243
https://doi.org/10.3103/s1062873822120243
Autor:
A. V. Leontyev, D. K. Zharkov, A. G. Shmelev, V. G. Nikiforov, V. S. Lobkov, E. O. Mityushkin, M. H. Alkahtani
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 86:1467-1469
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d528b7e84fda67d37e504e817699bb68
https://doi.org/10.3103/s1062873822120206
https://doi.org/10.3103/s1062873822120206
Autor:
D. K. Zharkov, V. G. Nikiforov, A. G. Shmelev, A. V. Leontiev, E. O. Mityushkin, N. M. Lyadov, N. I. Nurgazizov, A. P. Chuklanov, A. V. Pashkevich, V. S. Lobkov
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 86:1470-1472
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24fb5379303b96a3dfafe27ad89ef7d6
https://doi.org/10.3103/s1062873822120309
https://doi.org/10.3103/s1062873822120309
Autor:
A. G. Shmelev, V. G. Nikiforov, D. K. Zharkov, V. V. Andrianov, L. N. Muranova, A. V. Leont’ev, Kh. L. Gainutdinov, V. S. Lobkov, M. H. Alkahtani, Ph. R. Hemmer
Publikováno v:
Technical Physics. 67:283-288
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::024b373cb22c5abeb1af3762a5229255
https://doi.org/10.1134/s1063784222050097
https://doi.org/10.1134/s1063784222050097
Autor:
D. V. Lapaev, V. G. Nikiforov, V. S. Lobkov, R. M. Ziyatdinova, A. A. Knyazev, Yu. G. Galyametdinov
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 85:1377-1382
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6ddd329f98249fa8245ffe1780f0749
https://doi.org/10.3103/s1062873821120224
https://doi.org/10.3103/s1062873821120224
Autor:
A. G. Shmelev, E. O. Mityshkin, A. I. Gaisin, T. A. Vakhonina, A. Sh. Mukhtarov, A. V. Leontyev, D. K. Zharkov, V. G. Nikiforov, M. Yu. Balakina, V. S. Lobkov
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 85:1411-1414
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d84016e6d267cab7f6f468e0efd93bdc
https://doi.org/10.3103/s1062873821120327
https://doi.org/10.3103/s1062873821120327
Autor:
V. S. Lobkov, A. A. Knyazev, Yu G. Galuametdinov, R. M. Ziyatdinova, Dmitry V. Lapaev, V. V. Samartsev, V. G. Nikiforov
Publikováno v:
Journal of Physics: Conference Series. 1628:012008
We have observed an elastic change in luminescent properties of a 20 µm thick vitrified film (prepared from an amorphous powder of an anisometric europium(III) β-diketonate complex through a melt-processing technique and sandwiched between two quar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ea1e87b046b9bc48771dcfaeb0a0997
https://doi.org/10.1088/1742-6596/1628/1/012008
https://doi.org/10.1088/1742-6596/1628/1/012008
Autor:
A. V. Leont’ev, A. V. Kukin, A. G. Shmelev, V. S. Lobkov, E. I. Terukov, A. V. Bobyl, V. L. Matuhin, M. G. Sevastyanov
Publikováno v:
Semiconductors. 47:1358-1361
Experimental results on the electron relaxation time and diffusion coefficient in hydrogenated amorphous silicon films that exhibit intrinsic and electronic conductivity at room temperature are reported. It is found that, for these two types of films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc167bf4d555d93b7de43f6a424edcf7
https://doi.org/10.1134/s1063782613100242
https://doi.org/10.1134/s1063782613100242
Publikováno v:
Semiconductors. 35:1366-1368
Relaxation of the dynamic gratings formed by nonequilibrium charge carriers in thin single-crystal silicon films during femtosecond laser excitation was studied. The case of the ultimate concentration of carriers (N≈1021 cm−3) is considered. Ambi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6d868ff9e4013cfdcb7185f8d35d563
https://doi.org/10.1134/1.1427971
https://doi.org/10.1134/1.1427971
Publikováno v:
SPIE Proceedings.
We realized a logical function of bit-to-bit parallel multiplication for optical echo-processor based on the third-order nonlinear optical response of a resonant medium at room temperature. As an operating medium we used the polyvinilbutural film dop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2820d56a6baa8086d87937c5b4d183f1
https://doi.org/10.1117/12.881029
https://doi.org/10.1117/12.881029