Zobrazeno 1 - 10
of 25
pro vyhledávání: '"V. S. Kogotkov"'
Autor:
I. A. Sheremet, M. V. Virko, P. N. Vorontsov-Velyaminov, Vladislav Voronenkov, Yu. G. Shreter, Ruslan Gorbunov, Natalia Bochkareva, V. S. Kogotkov, Andrey Leonidov
Publikováno v:
Semiconductors. 51:1186-1193
A study of the current and capacitance dependences on the forward voltage in Au/n-GaN Schottky diodes, the sub-band optical absorption spectra, and the defect photoluminescence in n-GaN bulk crystals and thin layers is reported. It is shown that defe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62bc816a710c4bf1439b23ce750c8c04
https://doi.org/10.1134/s1063782617090068
https://doi.org/10.1134/s1063782617090068
Autor:
I. A. Sheremet, D. V. Tarkhin, V. Y. Davydov, Alexander N. Smirnov, Y. G. Shreter, N. I. Bochkareva, Andrey Leonidov, Y. S. Lelikov, M. V. Virko, F. E. Latishev, Andrey Zubrilov, Vladislav Voronenkov, A. V. Pinchuk, V. S. Kogotkov, R. I. Gorbunov
Publikováno v:
Semiconductors. 51:115-121
The intense absorption of CO2 laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dd163bc24aa758a9276a2a7b12da5d0
https://doi.org/10.1134/s1063782617010249
https://doi.org/10.1134/s1063782617010249
Autor:
Y. G. Shreter, Vladislav Voronenkov, Andrey Zubrilov, Ruslan Gorbunov, Andrey Leonidov, Yuri Lelikov, Natalia Bochkareva, V. S. Kogotkov, Philippe Latyshev
Publikováno v:
2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).
Gallium Nitride substrates are crucial for the production of reliable GaN-based devices with high current density: light emitting diodes and lasers, high-voltage diodes and transistors, and microwave high electron mobility transistors. However, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e0c02e808f9a5c829f9413f8c3664ed
https://doi.org/10.1109/cleoe-eqec.2019.8871587
https://doi.org/10.1109/cleoe-eqec.2019.8871587
Autor:
Andrey Leonidov, Yuri Lelikov, V. S. Kogotkov, Philippe Latyshev, Y. G. Shreter, Andrey Zubrilov, Natalia Bochkareva, Ruslan Gorbunov, Vladislav Voronenkov
Publikováno v:
2019 Compound Semiconductor Week (CSW).
A HVPE reactor for growth of bulk GaN epitaxial layers with a diameter of 50 mm was developed. High-capacity external halide precursor sources for gallium, aluminum and boron allow non-stop growth of bulk GaN layers with a thickness of 10 mm and high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f144419f2f2cff36803c9cf9b282a1c7
https://doi.org/10.1109/iciprm.2019.8819335
https://doi.org/10.1109/iciprm.2019.8819335
Autor:
Andrey Leonidov, Natalia Bochkareva, Philipp Latyshev, Yuri Lelikov, Y. G. Shreter, Ruslan Gorbunov, Vladislav Voronenkov, V. S. Kogotkov, Andrey Zubrilov
A free-standing bulk gallium nitride layer with a thickness of 365 $\mu$m and a diameter of 50 mm was obtained by hydride vapor phase epitaxy on a sapphire substrate with a carbon buffer layer. The carbon buffer layer was deposited by thermal decompo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86b20b6bddb54ca2e7f9fb564e38c44c
http://arxiv.org/abs/1902.04672
http://arxiv.org/abs/1902.04672
Autor:
R. I. Gorbunov, Yu. T. Rebane, V. Yu. Davydov, M. V. Virko, Vladislav Voronenkov, D. V. Tarhin, N. I. Bochkareva, Andrey Leonidov, Andrey Zubrilov, P. E. Latyshev, Alexander N. Smirnov, Yu. G. Shreter, V. S. Kogotkov, Yu. S. Lelikov
Publikováno v:
Semiconductors. 50:699-704
The physical and technological basics of the method used to lift off lightly and moderately doped n-GaN films from heavily doped n+-GaN substrates are considered. The detachment method is based on the free-charge-carrier absorption of IR laser light,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::336a2d34633c31010ae9a30923ab102d
https://doi.org/10.1134/s1063782616050250
https://doi.org/10.1134/s1063782616050250
Autor:
Yury Georgievich Shreter, Yu. T. Rebane, V. S. Kogotkov, Alexander M. Ivanov, M. V. Virko, A. V. Klochkov, N. I. Bochkareva
Publikováno v:
Semiconductors. 49:827-835
It is shown that the emission efficiency and the 1/f noise level in light-emitting diodes with InGaN/GaN quantum wells correlate with how the differential resistance of a diode varies with increasing current. Analysis of the results shows that hoppin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f97f21af339cb5863db05f0dc296fec1
https://doi.org/10.1134/s1063782615060056
https://doi.org/10.1134/s1063782615060056
Autor:
V. S. Kogotkov, Andrey Zubrilov, Andrey Leonidov, Yuri Lelikov, Philipp Latyshev, Natalia Bochkareva, Ruslan Gorbunov, Y. G. Shreter, Vladislav Voronenkov
Publikováno v:
Results in Physics, Vol 13, Iss, Pp-(2019)
A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off process did not require any special release layers in the epitaxial st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6aad0474d0615706b99ca7e8adae9411
https://doi.org/10.1016/j.rinp.2019.102233
https://doi.org/10.1016/j.rinp.2019.102233
Autor:
V V Voronenkov, A A Leonidov, N I Bochkareva, R I Gorbunov, P E Latyshev, Y S Lelikov, V S Kogotkov, A S Zubrilov, Y G Shreter
Publikováno v:
Journal of Physics: Conference Series; 2019, Vol. 1199 Issue 1, p1-1, 1p
Autor:
Emtsev, V. V.1, Gushchina, E. V.1, Petrov, V. N.1, Tal’nishnih, N. A.2, Chernyakov, A. E.2, Shabunina, E. I.1, Shmidt, N. M.1 Natalia.Shmidt@mail.ioffe.ru, Usikov, A. S.3, Kartashova, A. P.1, Zybin, A. A.4, Kozlovski, V. V.5, Kudoyarov, M. F.1, Saharov, A. V.1, Oganesyan, A. G.1, Poloskin, D. S.1, Lundin, V. V.1
Publikováno v:
Semiconductors. Jul2018, Vol. 52 Issue 7, p942-949. 8p.