Zobrazeno 1 - 6
of 6
pro vyhledávání: '"V. S. Kalinovskiy"'
Autor:
V. M. Andreev, S. V. Sorokina, N. S. Potapovich, A. S. Vlasov, O. A. Khvostikova, M. Z. Shvarts, V. S. Kalinovskiy, V. P. Khvostikov
Publikováno v:
Semiconductors. 52:1754-1757
Electrical supply sources based on photovoltaic converters and tritium radioluminescent lamps with blue and green glow are developed and fabricated. AlxGa1 –xAs/n-GaAs p–n heterostructures with various band-gap widths (Eg = 1.4–1.9 eV) and comp
Autor:
V. P. Khvostikov, A. V. Bobyl, V. S. Kalinovskiy, N. A. Potapovich, E.P. Rakova, G. F. Tereschenko, A. S. Vlasov, S. V. Sorokina, V. M. Andreev
Publikováno v:
Semiconductors. 44:1244-1248
A prototype compact TPV generator with a propane burner (pressure 2 bar) and a metallic netted emitter has been developed and tested. A photovoltaic generator unit with 24 (1 × 1 cm2) GaSb cells has been fabricated. The fabrication technology of pho
Autor:
V S Kalinovskiy, E. V. Kontrosh, Stefan Ivanov, A N Sumarokov, G. V. Klimko, G A Gusev, V. S. Yuferev, T S Tabarov, Viacheslav M. Andreev
Publikováno v:
Journal of Physics: Conference Series. 993:012029
Simulation of the structure of multijunction photodiodes has been performed on the assumption that an equal of the number of photons is absorbed in them, and PV characteristics have been stadied AlxGa1-xAs/GaAs photodiodes fabricated by the molecular
Publikováno v:
Journal of Physics: Conference Series. 769:012068
Characteristics of GaAs photodiodes have been studied before and after the chemical nitridation of their surface in hydrazine sulfide solutions, which leads to substitution of surface As atoms with N atoms to give a GaN monolayer. The resulting nitri
Publikováno v:
Journal of Physics: Conference Series. 690:012036
Forward dark and load I - V characteristics of triple-junction GaInP/Ga(In)As/Ge solar cells (SCs) in the temperature range 300 - 80 K have been studied. At temperatures below 200 K, jumps of current and voltage in, respectively, dark and load charac
Publikováno v:
Journal of Physics: Conference Series; 2016, Vol. 690 Issue 1, p1-1, 1p