Zobrazeno 1 - 6
of 6
pro vyhledávání: '"V. S. Dunaev"'
Autor:
L. N. Savonenkova, V. I. Ruzov, S. V. Аnisimova, T. S. Vasilieva, V. S. Dunaev, D. V. Kolchin
Publikováno v:
Туберкулез и болезни лёгких, Vol 98, Iss 2, Pp 30-34 (2020)
The objective: to study specific characteristics of epidemiology and clinical manifestations of tuberculosis spondylitis in Ulyanovsk Region.Subjects and methods: Annual reports of the regional TB dispensary and medical records of all 160 tuberculosi
Externí odkaz:
https://doaj.org/article/7166d857c76b4a84a39ac64fbcce3715
Autor:
Yu. N. Drozdov, O. V. Vikhrova, S.M. Plankina, A.V. Nezhdanov, B. N. Zvonkov, Alexei V. Kudrin, V. S. Dunaev, Y.A. Danilov
Publikováno v:
Solid State Phenomena. 190:109-112
t is reported about fabrication by laser deposition in a gaseous environment of epitaxial layers of ferromagnetic semiconductors GaMnSb and InMnSb. Investigations of x-ray diffraction and Raman scattering showed reasonably good crystal quality of GaM
Composition and structural perfection of (AIII,Mn)BV and MnBV (A = Ga, In; B = Sb, As, P) nanolayers
Autor:
B. N. Zvonkov, M. N. Drozdov, O. V. Vikhrova, Yu. N. Drozdov, V. S. Dunaev, Yu. A. Danilov, A. I. Suchkov
Publikováno v:
Inorganic Materials. 48:553-558
We have determined the elemental composition of laser-deposited (Ga,Mn)Sb, (In,Mn)As, MnP, MnAs, and MnSb layers. The InMnAs layers were not single-phase and contained MnAs clusters. Active Ga and Mn diffusion to the substrate and arsenic diffusion f
Autor:
B. N. Zvonkov, Yu. A. Danilov, O. V. Vikhrova, Yu. N. Drozdov, I. L. Kalentieva, V. S. Dunaev, A. V. Kudrin, M. N. Drozdov
Publikováno v:
Journal of Spintronics and Magnetic Nanomaterials. 1:82-84
Autor:
S.M. Plankina, Alexei V. Kudrin, A.V. Nezhdanov, Yu. A. Danilov, Yu. N. Drozdov, M. V. Sapozhnikov, V. S. Dunaev, O. V. Vikhrova, B. N. Zvonkov
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 76:171-173
The structural, optical, and galvanomagnetic properties of (Ga, Mn)Sb layers grown by the laser sputtering of solid targets in H2 flow are n studied. It is shown that at a growth temperature of 400°C, (Ga, Mn)Sb layers are single-crystal up to high
Publikováno v:
Khirurgiia. (6)