Zobrazeno 1 - 10
of 68
pro vyhledávání: '"V. S. Chernysh"'
Autor:
V. S. Chernysh, Aleksei E. Ieshkin, Nikolai G. Korobeishchikov, Vasiliy O. Pelenovich, Aleksandr Borisovich Tolstoguzov
Publikováno v:
Physics-Uspekhi. 65:677-705
Autor:
Yu. V. Balakshin, A. P. Evseev, Andrey A. Shemukhin, A.V. Nazarov, V. S. Chernysh, Yu. M. Spivak, E. N. Muratova, A. V. Kozhemiako
Publikováno v:
Moscow University Physics Bulletin. 75:465-468
In this paper, the irradiation of porous silicon with Ar $${}^{+}$$ ions with the energies of 100 and 200 keV and fluences from $$10^{12}$$ cm $${}^{-2}$$ up to $$3\times 10^{13}$$ cm $${}^{-2}$$ has been performed and studied. The effect of ion irra
Autor:
A. V. Kozhemiako, D. K. Minnebaev, A.V. Nazarov, V. S. Chernysh, Alexander M. Smirnov, Andrey A. Shemukhin, A. P. Evseev, Yu. V. Balakshin, E. A. Vorobyeva
Publikováno v:
Moscow University Physics Bulletin. 75:133-136
Silicon carbide was irradiated with aluminum ions at an energy of 190 keV with fluences of $$2\times 10^{13}{-}5\times 10^{14}$$ ion/cm $${}^{2}$$ . The temperature of the target during irradiation was 300–500 $${}^{\circ}$$ C or it was kept at roo
Publikováno v:
Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 460, 180-184. Elsevier
The composition of Ni x Pd y (x, y = 1, 5) and NiMoRe alloys irradiated by 3 and 4 keV Ar + ions along the normal to the sample surface was investigated in situ by low energy ion scattering spectroscopy (LEIS). The analysis was performed using a 5 ke
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 460:165-168
Gas cluster ion beam is known as a tool for surface smoothing; at the same time, surface relief formation under oblique beam incidence was reported. We suggested using samples with pre-formed surface pattern to study its evolution caused by ion irrad
Autor:
Andrey A. Shemukhin, Yu. S. Fedotov, A. V. Kozhemiako, A. V. Danilov, V. S. Chernysh, B. Merzuk, A. P. Evseev, V. I. Egorkin
Publikováno v:
Moscow University Physics Bulletin. 74:620-624
4H-SiC was irradiated with Al+ions at an energy of 190 keV. The depth profiles of implanted aluminum were obtained using the secondary ion mass spectrometry method; a comparison was made with profiles calculated in the SRIM program. Using Rutherford
Autor:
Yu. V. Balakshin, Andrey A. Shemukhin, A. V. Kozhemiako, Sandra Petrović, M. Erich, V. S. Chernysh
Publikováno v:
Semiconductors
Experimental depth distributions of the concentration of implanted xenon ions depending on their charge state and irradiation energy are presented. Xenon ions in charge states q = 1–20 and energies in the range from 50 to 400 keV are incorporated i
Autor:
A. E. Ieshkin, Wenbin Zuo, Dejun Fu, Bing Yang, Alexander Tolstogouzov, Xiaomei Zeng, V. S. Chernysh, Vasiliy O. Pelenovich
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 450:131-134
In this paper, we study time-of-flight (TOF) mass-spectra of the Ar cluster beams obtained by nozzles with different diameters, at different source pressures, and ionizing electron energies. The TOF mass-spectra are measured at minimal electron energ
Publikováno v:
Journal of Visualization. 22:741-750
Transonic and supersonic flows near the cones were visualized with two types of discharges. Pulse volume discharge with pre-ionization by plasma sheets was used to visualize the flow with discontinuities with time resolution in nanosecond range. Bow
Autor:
Bing Yang, Dejun Fu, Vasiliy O. Pelenovich, A. E. Ieshkin, Alexander Tolstogouzov, Xiaomei Zeng, V. S. Chernysh
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 13:344-350
A custom-built gas cluster ion source with an energy up to 20 keV is constructed. Ar, CO2, N2, and O2 are used as the working gases. The clusters are formed by metal conical nozzles with critical diameters of 65−135 um and a cone angle of 14°. To