Zobrazeno 1 - 10
of 294
pro vyhledávání: '"V. Romaka"'
Publikováno v:
Фізика і хімія твердого тіла, Vol 21, Iss 2, Pp 272-278 (2020)
Interaction between the components in the Ho-Fe-Sn ternary system was studied using X-ray diffractometry, metallography and electron microprobe analysis. Isothermal section of the phase diagram was constructed at 670 K over the whole concentration ra
Externí odkaz:
https://doaj.org/article/bdaba063f46e4a3e809f14b2cc664ad5
Publikováno v:
Фізика і хімія твердого тіла, Vol 21, Iss 1, Pp 73-81 (2020)
The effect of doping of the TiCoSb compound (MgAgAs structure type) by Mo atoms on the features of the structural characteristics and behavior of the electrokinetic, energetic and magnetic properties of the Ti1-xMoxCoSb semiconducting solid solution
Externí odkaz:
https://doaj.org/article/9fe35932794044ebba73a80662510618
Publikováno v:
Фізика і хімія твердого тіла, Vol 20, Iss 4, Pp 376-383 (2020)
The isothermal section of the phase diagram of the Er–Cr–Ge ternary system was constructed at 1070 K over the whole concentration range using X-ray diffractometry, metallography and electron microprobe analysis (EPMA). At the temperature of inves
Externí odkaz:
https://doaj.org/article/07d17277958b486c9e3f7c0b5793a695
Autor:
Olesia Voloshyna, Vitaliy V. Romaka, Koushik Karmakar, Silvia Seiro, Andrey Maljuk, Bernd Büchner
Publikováno v:
Crystals, Vol 12, Iss 7, p 998 (2022)
The travelling solvent floating zone (TSFZ) growth of Eu-substituted LSCO (La1.81−xEuxSr0.19CuO4, with nominal x = 0 ÷ 0.4) single crystals was systematically explored for the first time. The substitution of La with Eu considerably decreased the d
Externí odkaz:
https://doaj.org/article/d62b8060333b486b9ef92cfe7598b92c
Publikováno v:
Фізика і хімія твердого тіла, Vol 19, Iss 1, Pp 60-65 (2018)
The interaction of the components in the Gd-Mn-Sn ternary system was studied using the methods of X-ray and microstructure analyses, in the whole concentration range. The phase diagrams of the Gd-Mn-Sn system were constructed at 873 and 673 K. At bot
Externí odkaz:
https://doaj.org/article/b7ee23e321574c6f8e4778bfea449e5c
Publikováno v:
Фізика і хімія твердого тіла, Vol 18, Iss 2, Pp 187-193 (2018)
The mechanism of simultaneous generation of donor-acceptor pairs in ZrNiSn1-xGax semiconductor solid solution is established. The modeled distribution of atoms in the crystal lattice of ZrNiSn1-xGax showed that the speed of movement of Fermi level ε
Externí odkaz:
https://doaj.org/article/810b0f9bc94e474cb39b8eebab010d14
Publikováno v:
Фізика і хімія твердого тіла, Vol 17, Iss 2, Pp 212-221 (2017)
The features of structural, energy state and electrokinetic characteristics were investigated for Hf1 xTmxNiSn solid solution in the range: T = 80 - 400 K, x = 0 - 0.40. It was confirmed partly disorder crystal structure of HfNiSn compound as a resul
Externí odkaz:
https://doaj.org/article/4fd140b84ae24bedbc6c26000963881a
Publikováno v:
Фізика і хімія твердого тіла, Vol 17, Iss 1, Pp 37-42 (2017)
The features of structural, energy state and kinetic characteristics of the p-GdNiSb and p-LuNiSb semiconductors were investigated in the temperature range T = 4.2-400 K. As example, in p-LuNiSb, the generating of structural acceptor defects as a res
Externí odkaz:
https://doaj.org/article/2ba7e5ce7df94944853e11c78ee10f63
Publikováno v:
Фізика і хімія твердого тіла, Vol 17, Iss 4, Pp 552-558 (2017)
The features of structural, energy state and electrokinetic characteristics were investigated for Hf1-xErxNiSn solid solution in the range: T = 80 – 400 K, x = 0 - 0.10. It was confirmed partly disorder crystal structure of HfNiSn compound as a res
Externí odkaz:
https://doaj.org/article/4854a4a134054e7fa7085fa98f798896
Autor:
T. O. Prikhna, M. K. Monastyrov, B. Büchner, V. V. Klimov, M. V. Karpets, V. E. Moshchil, A. V. Shaternik, V. V. Romaka, G. A. Bagliuk, G. M. Kochetov, O. V. Prysiazhna
Publikováno v:
Powder Metallurgy and Metal Ceramics. 61:155-161
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c8f588c701a1b792b7c16c0fa895ade
https://doi.org/10.1007/s11106-022-00302-z
https://doi.org/10.1007/s11106-022-00302-z