Zobrazeno 1 - 10
of 192
pro vyhledávání: '"V. Resta"'
Autor:
Stefan De Gendt, Pierre-Emmanuel Gaillardon, Giovanni De Micheli, Giovanni V. Resta, Yashwanth Balaji, Alessandra Leonhardt
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 27:1486-1503
Here, we review the most recent developments in the field of 2-D electronics. We focus first on the synthesis of 2-D materials, discussing the different growth techniques currently available and assessing their strengths and weaknesses. Moreover, we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b0913f48119c16cc6a216524eaade85
https://doi.org/10.1109/tvlsi.2019.2914609
https://doi.org/10.1109/tvlsi.2019.2914609
Autor:
Fabiana Ferrari, A. Ciccozzi, Katia Cannita, V. Cocciolone, E Di Cesare, Enrico Ricevuto, Dina Di Giacomo, A. Bafile, V. Resta, L Pizzorno, C. Ficorella, Claudia Marsecano, T Sidoni
Publikováno v:
Cancer Research. 76:P2-09
Between January 2003 and January 2015, women at genetic risk of developing breast and/or ovarian cancer were selected for a surveillance program. The monitoring strategy consisted of the association of breast ultrasound (US), every six months, and Rx
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c0f906a84cf6233ac7d074c0a60ce39
https://doi.org/10.1158/1538-7445.sabcs15-p2-09-14
https://doi.org/10.1158/1538-7445.sabcs15-p2-09-14
Publikováno v:
Functionality-Enhanced Devices An alternative to Moore's Law ISBN: 9781785615580
The book chapter is dedicated to polarity-controllable devices fabricated with two dimensional (2D) semiconducting tungsten diselenide (WSe2). The chapter is organized as follows: first, a general introduction on 2D materials is presented, followed b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c55995f74a990ff31734c9658f357fa6
https://doi.org/10.1049/pbcs039e_ch4
https://doi.org/10.1049/pbcs039e_ch4
Publikováno v:
Beyond-CMOS Technologies for Next Generation Computer Design ISBN: 9783319903842
Complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs) have been the fundamental brick for the development of modern micro-electronics since their introduction in the 1970s. Complementary logic gates are based on the use of tw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc9ce64ac8d3821ada376e29fadf6e48
https://doi.org/10.1007/978-3-319-90385-9_2
https://doi.org/10.1007/978-3-319-90385-9_2
Autor:
Tarun Agarwal, Yashwanth Balaji, Jorge Romero Gonzalez, Pierre-Emmanuel Gaillardon, Giovanni V. Resta, Francky Catthor, Iuliana Radu, Dennis Lin, Giovanni De Micheli
Publikováno v:
DATE
Web of Science
Web of Science
As scaling of conventional silicon-based electronics is reaching its ultimate limit, two-dimensional semiconducting materials of the transition-metal-dichalcogenides family, such as MoS2 and WSe2, are considered as viable candidates for next-generati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d346bcb921b1c6d1c2eb99568890241
https://doi.org/10.23919/date.2018.8342088
https://doi.org/10.23919/date.2018.8342088
Autor:
Adriana E. Lita, William H. Farr, Jeffrey A. Stern, Richard P. Mirin, Sae Woo Nam, Matthew D. Shaw, Andrew D. Beyer, Giovanni V. Resta, Francesco Marsili, M. Shane Allman, Varun B. Verma
Publikováno v:
IEEE Transactions on Applied Superconductivity. 25:1-5
Single-pixel fiber-coupled superconducting nanowire single-photon detectors (SNSPDs) operating at 1550 nm and utilizing amorphous superconducting tungsten silicide (WSi) films have proven ability to detect photons with: high system-detection efficien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb59ef3f51df6a2cdf376a08677347b4
https://doi.org/10.1109/tasc.2014.2378232
https://doi.org/10.1109/tasc.2014.2378232
Autor:
Tarun Agarwal, Dennis Lin, Francky Catthoor, Pierre-Emmanuel Gaillardon, Giovanni V. Resta, Iuliana Radu, Giovanni De Micheli
Publikováno v:
Scientific Reports
Two-dimensional semiconducting materials of the transition-metal-dichalcogenide family, such as MoS2 and WSe2, have been intensively investigated in the past few years, and are considered as viable candidates for next-generation electronic devices. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23d234b9664501f15b78589586407f66
http://europepmc.org/articles/PMC5372079
http://europepmc.org/articles/PMC5372079
Autor:
Jeffrey A. Stern, Varun B. Verma, Francesco Marsili, Sae Woo Nam, Jason P. Allmaras, William H. Farr, Giovanni V. Resta, Andrew D. Beyer, R. P. Mirin, Ryan M. Briggs, M. D. Shaw
Publikováno v:
Conference on Lasers and Electro-Optics.
We developed a 64-pixel 320 μm diameter array of WSi SNSPDs for the ground receiver of a deep-space optical communication link. The SNSPD array exhibits a free-space system detection efficiency of 40% at 1550 nm.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e21f00f3c5425cf3b205d04fee4bf4e0
https://doi.org/10.1364/cleo_at.2017.jth3e.7
https://doi.org/10.1364/cleo_at.2017.jth3e.7
Autor:
Yashwanth Balaji, Surajit Sutar, Pierre-Emmanuel Gaillardon, Dennis Lin, Giovanni V. Resta, Giovanni De Micheli, Francky Catthoor, Praveen Raghavan, Aaron Thean, Iuliana Radu
Publikováno v:
Scientific Reports
As scaling of conventional silicon-based electronics is reaching its ultimate limit, considerable effort has been devoted to find new materials and new device concepts that could ultimately outperform standard silicon transistors. In this perspective
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f57084d0894abc3bf6980b05e24fa07f
http://europepmc.org/articles/PMC4937442
http://europepmc.org/articles/PMC4937442
Akademický článek
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