Inactivation of Bacteria and Biomolecules by Low-Pressure Plasma Discharges

Autor: A. von Keudell, Ana Ruiz, Hubert Rauscher, V. Raballand, J. Wunderlich, J. Opretzka, Ondřej Kylián, François Rossi, C. Dehen, Angel Yanguas-Gil, Katharina Stapelmann, Jan Benedikt, L. Byelykh, H Halfmann, Peter Awakowicz, C. Flötgen, Lylian Challier, P. Muranyi, Benjamin Denis, Lucel Sirghi, N. Hasiwa, R. Reuter, J.P. Deslys, E. Comoy

Publikováno v: Plasma Processes and Polymers. 7:327-352

The inactivation of bacteria and biomolecules using plasma discharges were investigated within the European project BIODECON. The goal of the project was to identify and isolate inactivation mechanisms by combining dedicated beam experiments with esp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3e39374e36826df2a041a031b1a64c48
https://doi.org/10.1002/ppap.200900121

High density fluorocarbon plasma etching of methylsilsesquioxane SiOC(H) low-kmaterial and SiC(H) etch stop layer: surface analyses and investigation of etch mechanisms

Autor: David Eon, Gilles Cartry, V. Raballand, Christophe Cardinaud

Publikováno v: Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2007, 40 (13), pp.3951. ⟨10.1088/0022-3727/40/13/007⟩

This paper focuses on plasma etching and XPS surface analyses of new dielectric materials used in integrated circuits. We investigate by XPS surface modifications of methylsilsesquioxane low-k polymer (SiOC(H)) and amorphous hydrogenated silicon carb

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32f4ac3b9fcf0de670e453418f7a51c3
https://doi.org/10.1088/0022-3727/40/13/007

Porous SiOCH, SiCH and SiO2 etching in high density fluorocarbon plasma with a pulsed bias

Autor: Gilles Cartry, Christophe Cardinaud, V. Raballand

Publikováno v: Plasma Processes and Polymers
Plasma Processes and Polymers, Wiley-VCH Verlag, 2007, 4 (5), pp.563. ⟨10.1002/ppap.200600218⟩

The effect of radio frequency bias pulsing on porous SiOCH, SiCH and SiO 2 etching using inductively coupled fluorocarbon plasmas was investigated. It was found that pulse frequency had only a small influence on material etch rates. However, pulse du

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec5fcf9140d7d20c0af4c85179a630f1
https://hal.archives-ouvertes.fr/hal-00391906

Plasma oxidation of polyhedral oligomeric silsesquioxane polymers

Autor: David Eon, Panagiotis Argitis, Evangelos Gogolides, Nikolaos Vourdas, V. Raballand, Gilles Cartry, Christophe Cardinaud

Publikováno v: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2006, 24, pp.2678. ⟨10.1116/1.2382947⟩

International audience; Copolymers containing polyhedral oligomeric silsesquioxane (POSS™) units have been developed to be used as photoresist components in a bilayer resist scheme for 193 nm lithography. This article reports on the behavior of the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::868ac199fbc4e507d4e804a0fd8a99c1
https://hal.archives-ouvertes.fr/hal-00379618/file/eon2006.pdf

Deposition of silicon dioxide films using an atmospheric pressure microplasma jet

Autor: A. von Keudell, M. Zimmermann, S. Hoffmann, V. Raballand, Jan Benedikt

Publikováno v: Journal of Applied Physics. 105:083304

Organic and inorganic silicon dioxide films have been deposited by means of an atmospheric pressure microplasma jet. Tetramethylsilane (TMS), oxygen, and hexamethyldisiloxane (HMDSO) are injected into argon as plasma forming gases. In the case of TMS

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f06b1950af85f9fdde4b08170bef37e2
https://doi.org/10.1063/1.3108541