Zobrazeno 1 - 10
of 20
pro vyhledávání: '"V. Poydenot"'
Autor:
J. Rothman, Thibaut Devillers, Serge Tatarenko, P. Bayle Guillemaud, A. Barski, V. Poydenot, E. Bellet Amalric, M. Jamet, Richard Mattana, Joel Cibert, R. Dujardin
Publikováno v:
physica status solidi (a). 204:130-135
In this paper we report on the structural and magnetic properties of GeMn layers grown on Ge(001). We show that for the optimized Mn concentration (6%) and for optimized growth temperature (close to 130 °C), GeMn samples exhibit a high Curie tempera
Autor:
J. Rothman, P. Bayle Guillemaud, M. Jamet, Richard Mattana, R. Dujardin, V. Poydenot, Joel Cibert, Serge Tatarenko, A. Barski, Thibaut Devillers, E. Bellet Amalric
Publikováno v:
physica status solidi c. 3:4123-4126
In the search for high-TC Si or Ge based ferromagnetic semiconductors, we present here the magnetic and transport properties of Ge1–xMnx nano-pillars. These pillars self-organize during the MBE growth of thin Mn doped (6%) Ge films as a consequence
Autor:
Pascale Bayle-Guillemaud, Romain Dujardin, Joel Cibert, Alain Marty, J. Rothman, Serge Tatarenko, Edith Bellet-Amalric, A. Barski, Matthieu Jamet, Richard Mattana, Thibaut Devillers, V. Poydenot
Publikováno v:
Nature Materials. 5:653-659
The emerging field of spintronics would be dramatically boosted if room-temperature ferromagnetism could be added to semiconductor nanostructures that are compatible with silicon technology. Here, we report a high-TC (>400 K) ferromagnetic phase of (
Publikováno v:
Surface Science. 600:L135-L138
Germanium dots have been grown on high twist angle (twist angle as high as 20°) molecular bonded silicon (0 0 1) substrates. We show that, depending on the thickness of the silicon film, the strain field generated by an ordered array of mixed edge i
Publikováno v:
Journal of Crystal Growth. 278:83-87
Highly ordered germanium nanostructures are grown by molecular beam epitaxy (MBE) on molecularly bonded silicon (0 0 1) substrates. For high twist-angle-bonded substrates (twist angle as high as 20°), a one-dimensional organization of growth is indu
Publikováno v:
Applied Physics Letters. 85:5700-5702
Ordered germanium hut islands are grown by molecular-beam epitaxy on high twist angle molecular bonded silicon (001) substrates (twist angle higher than 20°). We show that the growth organization is induced by an array of interfacial tilt dislocatio
Autor:
Edith Bellet-Amalric, A. Barski, Salia Cherifi, Pascale Bayle-Guillemaud, Joel Cibert, V. Poydenot, Matthieu Jamet, Thibaut Devillers
Publikováno v:
Physical Review B. 76
We report on the structural and magnetic properties of thin Ge(1-x)Mn(x)films grown by molecular beam epitaxy (MBE) on Ge(001) substrates at temperatures (Tg) ranging from 80°C to 200°C, with average Mn contents between 1 % and 11 %. Their crystall
Autor:
R. Dujardin, Vincent Favre-Nicolin, Pascal Gentile, A. Barski, Thibaut Devillers, V. Poydenot
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2006, 89 (15), pp.153129
Applied Physics Letters, 2006, 89 (15), pp.153129
Applied Physics Letters, American Institute of Physics, 2006, 89 (15), pp.153129
Applied Physics Letters, 2006, 89 (15), pp.153129
Silicon nanowhiskers have been grown by molecular beam epitaxy on Si (111) by vapor-liquid-solid mechanism induced by gold droplets. Very thin Ge containing layers have been incorporated in Si nanowhiskers in order to grow SiGe heterostructures. Si a
Autor:
Gilles Renaud, T. H. Metzger, V. Poydenot, M. Derivaz, S. Colonna, A. Barski, Tobias U. Schülli, Olivier Ulrich, R. Dujardin
Publikováno v:
Journal of applied physics 99 (2006): 063510. doi:10.1063/1.2181277
info:cnr-pdr/source/autori:Dujardin R., Poydenot V., Schülli T. U., Renaud G., Ulrich O., Barski A., Derivaz M., Colonna S., Metzger T./titolo:Strain and Composition of Ultrasmall Ge Quantum Dots Studied by X-ray Scattering and in situ Surface X-ray Absorption Spectroscopy/doi:10.1063%2F1.2181277/rivista:Journal of applied physics/anno:2006/pagina_da:063510/pagina_a:/intervallo_pagine:063510/volume:99
info:cnr-pdr/source/autori:Dujardin R., Poydenot V., Schülli T. U., Renaud G., Ulrich O., Barski A., Derivaz M., Colonna S., Metzger T./titolo:Strain and Composition of Ultrasmall Ge Quantum Dots Studied by X-ray Scattering and in situ Surface X-ray Absorption Spectroscopy/doi:10.1063%2F1.2181277/rivista:Journal of applied physics/anno:2006/pagina_da:063510/pagina_a:/intervallo_pagine:063510/volume:99
Investigations of the structural properties of ultrasmall Ge dots, grown through a thin silicon oxide layer on Si(001), have been performed by combining (i) grazing incidence x-ray diffraction, (ii) grazing incidence small angle x-ray scattering (GIS
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