Zobrazeno 1 - 10
of 33
pro vyhledávání: '"V. Paidi"'
Autor:
Mattias E. Dahlstrom, N. Parthasarathy, Lorene Samoska, V. Paidi, Munkyo Seo, Andy Fung, Z. Griffith, Miguel Urteaga, Mark J. W. Rodwell, Yun Wei
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 53:598-605
We report common-base medium power amplifiers designed for G-band (140-220 GHz) and W-band (75-110 GHz) in InP mesa double HBT technology. The common-base topology is preferred over common-emitter and common-collector topologies due to its superior h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48bd988e50a898706c13fb612e7c41b2
https://doi.org/10.1109/tmtt.2004.840662
https://doi.org/10.1109/tmtt.2004.840662
Autor:
Stephen I. Long, Likun Shen, Alessandro Chini, Shouxuan Xie, U.K. Mishra, V. Paidi, Sten Heikman, Mark J. W. Rodwell
Publikováno v:
International Journal of High Speed Electronics and Systems. 14:847-852
A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to obtain high linearity, a pre-linearization gate diode is added at the input to compensate for the nonlinear input capacitance C gs of the GaN HEMT devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2a7cf55341b06ea3f593fb4d5249ecf
https://doi.org/10.1142/s0129156404002934
https://doi.org/10.1142/s0129156404002934
Autor:
Sarah L. Keller, U.K. Mishra, Alessandro Chini, Robert Coffie, Brendan Jude Moran, Sten Heikman, Stephen I. Long, V. Paidi, Steven P. DenBaars, Mark J. W. Rodwell, Shouxuan Xie
Publikováno v:
IEEE Microwave and Wireless Components Letters. 13:284-286
A 36-dBm, high-linearity, single-ended class B MMIC power amplifier is reported in GaN HEMT technology. The circuit demonstrates high linearity, greater than 35 dBc of third-order intermodulation (IM3) suppression and high power added efficiency (PAE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::175b651b5f0a78ba0c932212b1111e78
https://doi.org/10.1109/lmwc.2003.811682
https://doi.org/10.1109/lmwc.2003.811682
Akademický článek
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Autor:
Petra Rowell, Bobby Brar, R.L. Pierson, V. Paidi, Mark J. W. Rodwell, Z. Griffith, Colin Sheldon, Miguel Urteaga, Uttam Singisetti, N. Parthasarathy
Publikováno v:
2005 Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics.
Well-balanced InP HBTs now have /spl sim/450 GHz cutoff frequencies and /spl sim/4 V breakdown. With such devices, 150 GHz digital circuits (static dividers) and 175 GHz amplifiers have been demonstrated. We discuss device requirements (scaling laws
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c20656b70d95fbe3ee904080dcdd650
https://doi.org/10.1109/icimw.2005.1572694
https://doi.org/10.1109/icimw.2005.1572694
Autor:
Berinder Brar, Petra Rowell, Z. Griffith, R.L. Pierson, Mark J. W. Rodwell, N. Parthasarathy, V. Paidi, Miguel Urteaga, Uttam Singisetti
Publikováno v:
2006 IEEE MTT-S International Microwave Symposium Digest.
InP HBTs at the 500 nm scaling generation have attained 450 GHz balanced cutoff frequencies and ~4 V breakdown. With such devices, 150 GHz digital circuits (static dividers) have been demonstrated. 175 GHz amplifiers have been demonstrated with slowe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f155e9848d5534e0ba047ee815e6ef3
https://doi.org/10.1109/mwsym.2006.249518
https://doi.org/10.1109/mwsym.2006.249518
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
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Autor:
Dennis W. Scott, Berinder Brar, C. Kadow, Yingda Dong, San-Liang Lee, C. Nguyen, Mark J. W. Rodwell, N. Nguyen, R.L. Pierson, Petra Rowell, Y. Wei, Z. Griffith, Mattias E. Dahlstrom, Miguel Urteaga, V. Paidi, N. Parthasarathy
Publikováno v:
Griffith, Zach; Dong, Yingda; Scott, Dennis; Wei, Yun; Parthasarathy, Navin; Dahlstrom, Mattias; et al.(2005). Transistor and Circuit Design for 100-200 GHz ICs. Journal of Solid-State Circuits, 40(10), 2061-2069. doi: 10.1109/JSSC.2005.854609. UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/4786087z
Compared to SiGe, InP HBTs offer superior electron transport properties but inferior scaling and parasitic reduction. Figures of merit for mixed-signal ICs are developed and HBT scaling laws introduced. Device and circuit results are summarized, incl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee1ff79d3043e175957f74d567249030
http://www.escholarship.org/uc/item/4786087z
http://www.escholarship.org/uc/item/4786087z
Autor:
Z. Griffith, Lorene Samoska, Andy Fung, Miguel Urteaga, N. Parthasarathy, Y. Wei, V. Paidi, Mattias E. Dahlstrom, Mark J. W. Rodwell
Publikováno v:
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers.
We report common base power amplifiers designed for 140-220 GHz frequency band in InP mesa double heterojunction bipolar transistor (DHBT) technology. A single stage common base tuned amplifier exhibited 7-dB small-signal gain at 176 GHz. This amplif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13322f8578a44ddf599348d92aa016e9
https://doi.org/10.1109/rfic.2004.1320567
https://doi.org/10.1109/rfic.2004.1320567
Autor:
Miguel Urteaga, N. Parthasarathy, Dennis W. Scott, Shouxuan Xie, Z. Griffith, V. Paidi, Yun Wei, Mark J. W. Rodwell
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest, 2003.
We report a 75 GHz MMIC power amplifier in InP/InGaAs/InP DHBT transferred-substrate technology. The amplifier has 256 /spl mu/m/sup 2/ total emitter area and exhibits a power gain of 5.5 dB at 75 GHz and a saturated output power of 19 dBm (80mW) und
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e90b30d44a2549de5d9daecec0bbabd5
https://doi.org/10.1109/mwsym.2003.1212519
https://doi.org/10.1109/mwsym.2003.1212519