Zobrazeno 1 - 6
of 6
pro vyhledávání: '"V. P. Veleshchuk"'
Autor:
S. S. Girgel, S. N. Levitskiy, G. S. Mityurich, A. I. Vlasenko, V. P. Veleshchuk, E. V. Lebedeva
Publikováno v:
Journal of Applied Spectroscopy. 87:724-728
Laser photothermoacoustic transformation in sensor semiconductor structures was experimentally and theoretically investigated. An expression for a pressure pulse describing the evolution of an ultrasonic response excited by a nanosecond laser pulse w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d058f7b1588ab6b4bc56c259166730e
https://doi.org/10.1007/s10812-020-01061-8
https://doi.org/10.1007/s10812-020-01061-8
Autor:
V. P. Veleshchuk, Toru Aoki, O. V. Lyashenko, Volodymyr A. Gnatyuk, A. I. Vlasenko, S. N. Levitskii, A. Baĭdullaeva, B. K. Dauletmuratov
Publikováno v:
Physics of the Solid State. 52:469-476
The features of mass transfer of indium in high-resistance CdTe crystals under nanosecond irradiation of the In-CdTe structure by laser pulses have been studied and analyzed. The mass transfer coefficients are determined and the average transfer rate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaea65fed503b7dbc7e58e893ac23764
https://doi.org/10.1134/s1063783410030054
https://doi.org/10.1134/s1063783410030054
Autor:
O. I. Vlasenko, Oleg V. Lyashenko, I. O. Lyashenko, Ju. A. Onanko, V. P. Veleshchuk, A. P. Onanko
Publikováno v:
Sensor Electronics and Microsystem Technologies. 6:36-41
Розглянуто питання про релаксацію поверхневих механічних напруг після імпульсного лазерного опромінення складних напівпровідникових
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6dcdcd00738c18709ecd9880d8d4b39
https://doi.org/10.18524/1815-7459.2009.1.115363
https://doi.org/10.18524/1815-7459.2009.1.115363
Autor:
A. Baidullaeva, P. E. Mozol, O. V. Lyashenko, A. I. Vlasenko, B. K. Dauletmuratov, V. P. Veleshchuk
Publikováno v:
Semiconductors. 42:281-285
The effect of a threshold process of surface melting on the acoustic response in CdTe and GaAs subjected to pulsed laser radiation is considered and the mechanisms of excitation of sonic signals are analyzed. Melting thresholds of the surface of bina
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48bd741d31660fff7bb66c726a73cca0
https://doi.org/10.1134/s106378260803007x
https://doi.org/10.1134/s106378260803007x
Publikováno v:
Journal of Applied Spectroscopy. 71:553-557
The dependence of the spectral position of the electroluminescence bands of epitaxial light-emitting diode n +–n–p structures (GaAs0.15P0.85) on the density of a direct heterojunction current at different successive instants of time — before an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98a9f0de2fb56f0140a6dabb02d42adb
https://doi.org/10.1023/b:japs.0000046297.98718.aa
https://doi.org/10.1023/b:japs.0000046297.98718.aa
Publikováno v:
AIP Conference Proceedings.
In the A3B5 heterostructures, the acoustic‐emission occurrence, electrical noises and quantum yield fluctuations are shown to correlate in time and have the common origin.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cba8135271a38627f07f525df2cf9539
https://doi.org/10.1063/1.2759670
https://doi.org/10.1063/1.2759670