Zobrazeno 1 - 3
of 3
pro vyhledávání: '"V. P. Shukailo"'
Autor:
V. P. Shukailo, Anatoly M. Strel'chuk, V. V. Zelenin, A. A. Lebedev, A. N. Kuznetsov, N. G. Orlov, N.S. Savkina, V. T. Gromov
Publikováno v:
Materials Science Forum. 897:459-462
Neutron irradiation (~1 MeV, dose 1014-5.6∙1015 neutron/cm2) of packaged diodes based on 6H-SiC pn structures (with the base n-layer doped to ~5∙1016 cm-3) has been studied. In addition to the well-known rise in the series resistance of the diode
Publikováno v:
Russian Microelectronics. 34:359-364
The effect of neutron irradiation with a fluence reaching 5 × 1015 cm−2 on a quasi-ballistic MESFET is studied theoretically and experimentally. A marked improvement is observed in the device performance; it is attributed to quantum effects. The e
Autor:
N. V. Garmasheva, N. P. Taybinov, A. V. Alekseev, V. L. Stryakhnin, O. V. Nesterov, V. P. Filin, B. G. Loboiko, O. V. Khruliova, V.T. Gromov, V. P. Shukailo, A. L. Gagarin
Publikováno v:
AIP Conference Proceedings.
Electron beam initiation of PETN monocrystals depending on their size and defectiveness as well as electron beam parameters and environmental acoustic stiffness, was investigated. The length of PETN monocrystals was from 1 mm to 30 mm. The experiment