Zobrazeno 1 - 10
of 11
pro vyhledávání: '"V. P. Mishkin"'
Autor:
K. N. Nishchev, M. I. Novopol'tsev, M. Yu. Malygin, Yu. V. Chernobrovkin, V. I. Beglov, A. F. Sigachev, V. P. Mishkin, N. V. Moiseev, E. N. Lyutova
Publikováno v:
Известия высших учебных заведений. Поволжский регион: Физико-математические науки, Iss 4 (2020)
Background. Modern semiconductor power devices (SPD) contain temperature compensators (TC) in their design, which can be made of a metal matrix composite material based on an aluminum matrix alloy and silicon carbide micropowder (MMC AlSiC). A mul
Externí odkaz:
https://doaj.org/article/7c51891486604cbc8ccf177ec891eb6d
Autor:
S. N. Ushakov, M. A. Uslamina, K. N. Nishev, P. P. Fedorov, S. V. Kuznetsov, V. S. Tsarev, A. V. Sudin, V. P. Mishkin, Y. A. Udina
Publikováno v:
2022 International Conference Laser Optics (ICLO).
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 83:1349-1352
Scanning electron microscopy and scanning probe microscopy are used to examine the surface morphology of aluminum foils exposed to anodizing in acidic solution. Anodizing in the potentiostatic mode is shown to form a uniform honeycomb nanostructure o
Autor:
V. B. Mishkin
Publikováno v:
Сибирское юридическое обозрение, Vol 0, Iss 14, Pp 107-109 (2011)
This paper describes in detail the system of leniency by the Penal Code in criminal and penal. It also conducts analogy with the current Criminal Code.
Externí odkaz:
https://doaj.org/article/f15a8e18431040babee1a877411819ac
Autor:
V. P. Mishkin, N. V. Moiseev, A. F. Sigachev, E. N. Lyutova, K. N. Nishchev, M. Yu. Malygin, V. I. Beglov, Yu. V. Chernobrovkin, Pjsc 'Elektrovypryamitel', M. I. Novopol'tsev
Publikováno v:
Известия высших учебных заведений. Поволжский регион: Физико-математические науки, Iss 4 (2020)
Background. Modern semiconductor power devices (SPD) contain temperature compensators (TC) in their design, which can be made of a metal matrix composite material based on an aluminum matrix alloy and silicon carbide micropowder (MMC AlSiC). A multil
Autor:
I. A. Kazantseva, A. P. Gorshkov, V. G. Shengurov, S. A. Denisov, D. O. Filatov, V. P. Mishkin, V. Yu. Chalkov
Publikováno v:
Semiconductors. 51:536-541
The spatial distribution of photocurrent in the plane of a Si-based p +–n junction with embedded self-assembled Ge x Si1–x (x ≈ 0.35) nanoislands is studied by scanning near-field optical microscopy with local photoexcitation by a microscope pr
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 9:383-387
The microstructure of Ti(N,C) coatings obtained in the vicinity of a sputtering cathode by condensation with ion bombardment is studied by scanning electron microscopy. Various inclusions such as drops, bubbles, pits, and traces of destruction and ot
Studying the microstructure of AlSiC metal matrix composite material by scanning electron microscopy
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 77:981-985
The microstructure of fractures in AlSiC metal matrix composite material obtained via vacuum compression impregnation of porous semi-finished materials is studied using a Quanta 200i 3D FEI scanning electron microscope. The disruption of AlSiC sample
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 256:012005
The spatial distribution of the photocurrent in the input window plane of a GaAs-based p?i?n photodiode with embedded self-assembled InAs quantum dots (QDs) has been studied with the photoexcitation through a Scanning Near-field Optical Microscope (S
Publikováno v:
Technical Physics. 49:884-886
The effect of the selective wet chemical etching of the emitting surface on the directivity pattern of radiation in the plane normal to the p-n junction is studied for InGaP/GaAs lasers with InGaAs quantum wells. It is found by atomic-force microscop