Zobrazeno 1 - 10
of 32
pro vyhledávání: '"V. P. Martovitsky"'
Autor:
I. B. Krynetskii, A. S. Moskvin, V. P. Martovitsky, N. P. Shabanova, S. Yu. Gavrilkin, A. V. Varlashkin
Publikováno v:
Bulletin of the Lebedev Physics Institute. 50:48-51
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f89343bac165b9ffcfd9ce8648ffd39a
https://doi.org/10.3103/s1068335623020033
https://doi.org/10.3103/s1068335623020033
Autor:
V. P. Martovitsky, Aleena Anna Thomas, Ilya Shipulin, Stefan Richter, Kornelius Nielsch, Ruben Hühne
Publikováno v:
Materials, Vol 13, Iss 3, p 630 (2020)
Materials
Volume 13
Issue 3
Materials
Volume 13
Issue 3
We performed a detailed structural, magnetotransport, and superconducting analysis of thin epitaxial Ba(Fe1&minus
xNix)2As2 films with Ni doping of x = 0.05 and 0.08, as prepared by pulsed laser deposition. X-ray diffraction studies demonstrate
xNix)2As2 films with Ni doping of x = 0.05 and 0.08, as prepared by pulsed laser deposition. X-ray diffraction studies demonstrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0d62ace55fe00fefca0e73b7b1e7828
https://www.mdpi.com/1996-1944/13/3/630
https://www.mdpi.com/1996-1944/13/3/630
Autor:
V. P. Martovitsky, A. V. Muratov, A. V. Klekovkin, A. B. Mehiya, Yu. A. Aleshchenko, V. S. Krivobok
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 82:418-423
Elastically strained metastable Ge1–xSn x layers with molar fractions of tin of up to 0.15 are grown on Si (001) substrates. To analyze the optical properties of the samples, photoluminescence (PL) spectra are measured at room temperature and IR tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f685077b71896814d479353cdf77551
https://doi.org/10.3103/s1062873818040123
https://doi.org/10.3103/s1062873818040123
Autor:
E. G. Nikolaev, K. S. Pervakov, V. A. Vlasenko, V. P. Martovitsky, Yu. Eltsev, L. B. Lugansky, S.L. Bud'ko, P. C. Canfield
Publikováno v:
Journal of Superconductivity and Novel Magnetism. 31:3289-3295
We have used 75As NMR and x-ray diffraction analysis to study the structural and electronic inhomogeneities in Ba(Fe1−xNix)2As2 crystals with x near the border of the antiferromagnetic domain. Unequal nickel population of the equivalent Fe planes a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a1a2447bd141d9d6fdc99a8074399e5
https://doi.org/10.1007/s10948-018-4587-x
https://doi.org/10.1007/s10948-018-4587-x
Publikováno v:
Journal of Alloys and Compounds. 880:160555
CdS/ZnSe multi quantum well (MQW) heterostructures with type II band offsets for blue-green semiconductor disk lasers were grown by metalorganic vapor-phase epitaxy (MOVPE) at T = 440 °C. The blurring of heterostructure interfaces during growth is i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::985f5f2a801fb07cf537629c4f779a4a
https://doi.org/10.1016/j.jallcom.2021.160555
https://doi.org/10.1016/j.jallcom.2021.160555
Publikováno v:
Semiconductors. 50:1548-1553
A stack of five elastically strained metastable GeSn layers with a thickness of 200 nm each separated by Ge spacer layers with a thickness of 20 nm is grown on a (001) Si/Ge virtual substrate. The molar fraction of Sn in the GeSn layers is 0.005, 0.0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e749c0884bc48c22570834fd06fe8cd
https://doi.org/10.1134/s106378261611018x
https://doi.org/10.1134/s106378261611018x
Autor:
V. N. Jmerik, Vladimir I. Kozlovsky, Ping Wang, Peng Jin, Weikun Ge, Tao Wang, He Chenguang, Guang Chen, V. P. Martovitsky, Xin-he Jiang, Viacheslav V. Ratnikov, Xuelin Yang, Alexey A. Toropov, Xinqiang Wang, Tobias Schulz, Xin Rong, Jun-jie Shi, Stefan Ivanov, Weiying Wang, Xu Fujun, Martin Albrecht, Zhixin Qin, Bo Shen
Publikováno v:
Advanced Materials. 28:7978-7983
Quasi-2D GaN layers inserted in an AlGaN matrix are proposed as a novel active region to develop a high-output-power UV light source. Such a structure is successfully achieved by precise control in molecular beam epitaxy and shows an amazing output p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c7d5f2083418b5dd8ace43351d50efa
https://doi.org/10.1002/adma.201600990
https://doi.org/10.1002/adma.201600990
Autor:
Stanislav A. Evlashin, Sarkis A. Dagesian, R. A. Khmelnitsky, Alexey A. Gippius, Alexandr A. Alekseev, Nikolay V. Suetin, V. P. Martovitsky, Pavel V. Pastchenko
Publikováno v:
Crystal Growth & Design. 16:1420-1427
Growth of perfect heteroepitaxial metal layers on diamond can extend applications of diamond in microelectronics and open new areas for its use in devices with unique electrical properties for operations at elevated temperatures and in harsh environm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5681ce3fa12fe40dbda038931402e798
https://doi.org/10.1021/acs.cgd.5b01520
https://doi.org/10.1021/acs.cgd.5b01520
Autor:
A. V. Varlashkin, I. B. Krynetskii, V. I. Kovalenko, S. Yu. Gavrilkin, V. P. Martovitsky, N. P. Shabanova
Publikováno v:
Bulletin of the Lebedev Physics Institute. 44:324-326
Tensometric study of n-type Bi2Se3 single crystals in dc magnetic fields to 6 T in a temperature range of 7–23 K detected a weak negative thermal expansion (NTE) in the basal plane. The NTE increases with the field strength and depends on its orien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee95d08bcef29ff6c4dc3cb78ea17988
https://doi.org/10.3103/s1068335617110033
https://doi.org/10.3103/s1068335617110033
Autor:
D. V. Averyanov, I. S. Vasil’evskii, Yu. G. Sadofyev, V. P. Martovitsky, A. V. Klekovkin, M. A. Bazalevsky
Publikováno v:
Semiconductors. 49:124-129
The growth of GeSn layers by molecular-beam epitaxy on Si (100) wafers coated with a germanium buffer layer is investigated. The properties of the fabricated structures are controlled by reflection high-energy electron diffraction, atomic-force micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12493be9d729da8607b3daf8ffbf04a9
https://doi.org/10.1134/s1063782615010248
https://doi.org/10.1134/s1063782615010248