Zobrazeno 1 - 10
of 80
pro vyhledávání: '"V. P. Gavrilenko"'
Autor:
B. Benhamou-Bui, C. Consejo, S. S. Krishtopenko, M. Szola, K. Maussang, S. Ruffenach, E. Chauveau, S. Benlemqwanssa, C. Bray, X. Baudry, P. Ballet, S. V. Morozov, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii, B. Jouault, J. Torres, F. Teppe
Publikováno v:
APL Photonics, Vol 8, Iss 11, Pp 116106-116106-6 (2023)
Two-dimensional Dirac fermions in HgTe quantum wells close to the topological phase transition can generate significant cyclotron emission that is magnetic field tunable in the terahertz frequency range. Due to their relativistic-like dynamics, their
Externí odkaz:
https://doaj.org/article/ce0b9f9eee864e5fb0e0bc1ac489e0cc
Publikováno v:
Zootechnical science of Belarus. 57:189-198
The main reserve for increasing the production of fodder and its quality is the expansion of the assortment of fodder crops, the introduction of new promising species and varieties. One way to solve these problems could be the widespread introduction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48723859ffbc4172be47b590cc0b0d49
https://doi.org/10.47612/0134-9732-2022-57-1-189-198
https://doi.org/10.47612/0134-9732-2022-57-1-189-198
Autor:
S. Ruffenach, A. Kadykov, V. V. Rumyantsev, J. Torres, D. Coquillat, D. But, S. S. Krishtopenko, C. Consejo, W. Knap, S. Winnerl, M. Helm, M. A. Fadeev, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, S. V. Morozov, F. Teppe
Publikováno v:
APL Materials, Vol 5, Iss 3, Pp 035503-035503-8 (2017)
Due to their specific physical properties, HgCdTe-based heterostructures are expected to play an important role in terahertz photonic systems. Here, focusing on gated devices presenting inverted band ordering, we evidence an enhancement of the terahe
Externí odkaz:
https://doaj.org/article/ef83a7b55c624089a626c5eb837b8a26
Autor:
O. I. Lyamina, A. Yu. Kuzin, S. A. Korneichuk, T. A. Kupriyanova, M. N. Filippov, P. A. Todua, A. V. Zablotskii, V. Ya. Shklover, V. P. Gavrilenko
Publikováno v:
Measurement Techniques. 59:198-201
The feasibility of using the diffraction peaks in x-ray emission spectra detected with energy dispersion for measuring the spacing between lattice planes in crystalline substances is demonstrated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7085b313f9797c1c19c945ea3c8ee185
https://doi.org/10.1007/s11018-016-0942-0
https://doi.org/10.1007/s11018-016-0942-0
Autor:
V. P. Gavrilenko, P. A. Todua, M. A. Stepovich, A. Yu. Kuzin, V. B. Mityukhlyaev, M. N. Filippov
Publikováno v:
Measurement Techniques. 58:953-957
An electron probe method for measuring the thickness of oxide films on silicon surfaces is proposed. The measurement range, lateral resolution, and measurement errors are estimated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e78bcec1856c8c7ff0d8de379cf7bb0
https://doi.org/10.1007/s11018-015-0824-x
https://doi.org/10.1007/s11018-015-0824-x
Autor:
T. N. Baimukhametov, P. A. Todua, V. B. Mityukhlyaev, A. Yu. Kuzin, A. L. Vasil’ev, V. P. Gavrilenko, A. A. Mikhutkin, D. A. Karabanov, M. N. Filippov
Publikováno v:
Measurement Techniques. 58:256-260
The profile of the surfaces of two samples of monocrystalline silicon containing trapezoidal-shaped protrusions is established by means of three-dimensional reconstruction from stereoscopic images obtained in a scanning electron microscope and the av
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd48ca82eb442e6800bb0ec1cebce2d3
https://doi.org/10.1007/s11018-015-0695-1
https://doi.org/10.1007/s11018-015-0695-1
Autor:
M. A. Ermakova, M. N. Filippov, V. P. Gavrilenko, A. V. Zablotskii, P. A. Todua, A. Yu. Kuzin
Publikováno v:
Measurement Techniques. 56:1339-1342
An estimate of the uncertainty of the results of measurements of the lattice spacing in silicon using the Bruker D8 DISCOVER laboratory diffractometer and a standard NIST SRM-2000 sample is given.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b385cdbc9a0558cf83df892c487189da
https://doi.org/10.1007/s11018-014-0378-3
https://doi.org/10.1007/s11018-014-0378-3
Autor:
P. A. Todua, V. P. Gavrilenko, V. B. Mityukhlyaev, M. A. Stepovich, M. N. Filippov, D. A. Karabanov, A. Yu. Kuzin
Publikováno v:
Measurement Techniques. 58:934-936
Contamination on the surface of a silicon relief structure during plasma cleaning has been detected. The kinetics of the growth of an oxide film and the change in the dimensions of the components of the structure are investigated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e289932ca0b26ead7cbb3a0fd6b7653
https://doi.org/10.1007/s11018-015-0820-1
https://doi.org/10.1007/s11018-015-0820-1
Autor:
Artur A. Kuzin, V. P. Gavrilenko, A. V. Zablotskii, M. N. Filippov, A. V. Rakov, Artem Kuzmin, V. B. Mityukhlyaev, P. A. Todua, M. A. Ermakova, A. Yu. Kuzin
Publikováno v:
Measurement Techniques. 56:616-619
Results of measurements of the thickness of natural oxide on a silicon structure in the form of a set of elements (protrusions) with trapezoidal profile, 2 μm step, width of upper base 10 nm, height of elements 500 nm, and tilt angle of lateral side
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c91d969815187ff5161fbca149659ab
https://doi.org/10.1007/s11018-013-0254-6
https://doi.org/10.1007/s11018-013-0254-6
Autor:
A. Yu. Kuzin, V. P. Gavrilenko, V. A. Sharonov, V. B. Mityukhlyaev, A. V. Rakov, M. N. Filippov, P. A. Todua
Publikováno v:
Measurement Techniques. 56:235-239
This is a study of the influence of contamination in an S-4800 scanning electron microscope at electron energies of 1 keV on the profile of the surface relief elements of an MShPS-2.0K standard gauge. The observed width of the upper base of the relie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86b67bf5cd6371b266cde95aca64278a
https://doi.org/10.1007/s11018-013-0186-1
https://doi.org/10.1007/s11018-013-0186-1