Zobrazeno 1 - 10
of 90
pro vyhledávání: '"V. P. Evtikhiev"'
Autor:
A. V. Babichev, E. S. Kolodeznyi, A.G. Gladyshev, D. V. Denisov, G. V. Voznyuk, M. I. Mitrofanov, D. A. Mikhailov, D. V. Chistyakov, D. I. Kuritsyn, V. V. Dudelev, S. O. Slipchenko, A. V. Lyutetskii, V. P. Evtikhiev, L. Ya. Karachinsky, I. I. Novikov, S. V. Morozov, G. S. Sokolovskii, N. A. Pikhtin, A. Yu. Egorov
Publikováno v:
Semiconductors. 56:1-4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f25edca47d7c4f8ab82dc89b72baff4b
https://doi.org/10.1134/s106378262201002x
https://doi.org/10.1134/s106378262201002x
Autor:
A. V. Babichev, E. S. Kolodeznyi, A. G. Gladyshev, D. V. Denisov, G. V. Voznyuk, M. I. Mitrofanov, N. Yu. Kharin, V. Yu. Panevin, S. O. Slipchenko, A. V. Lyutetskii, V. P. Evtikhiev, L. Ya. Karachinsky, I. I. Novikov, N. A. Pikhtin, A. Yu. Egorov
Publikováno v:
Semiconductors. 55:591-594
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de2eb138cf98cc29dc9b9455b75fea84
https://doi.org/10.1134/s106378262107006x
https://doi.org/10.1134/s106378262107006x
Autor:
V. P. Evtikhiev, M. I. Mitrofanov, D. I. Kuritsyn, E. S. Kolodeznyi, D. V. Denisov, G. V. Voznyuk, A. G. Gladyshev, A. V. Lyutetskii, Nikita A. Pikhtin, Anton Yu. Egorov, L. Ya. Karachinsky, A. V. Babichev, Sergey O. Slipchenko, Innokenty I. Novikov, S. V. Morozov
Publikováno v:
Semiconductors. 54:1816-1819
We have created a quantum-cascade laser with 7–8 μm wavelength and surface radiation output through a lattice formed by focused ion beam etching of the upper cladding of the waveguide. The active area of the quantum-cascade laser heterostructure w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac4dedfae79a45bf91e3eb1873bb8a5c
https://doi.org/10.1134/s106378262014002x
https://doi.org/10.1134/s106378262014002x
Autor:
I. N. Grigorenko, M. N. Mizerov, G. V. Voznyuk, M. I. Mitrofanov, V. P. Evtikhiev, D. N. Nikolaev
Publikováno v:
Semiconductors. 54:1869-1872
Light-emitting devices of modern photonics are based on the semiconductor structures containing layers with various physical parameters. To preserve initial parameters during focused ion beam (FIB) lithography, it is necessary to take into account th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cac5f96cf06f8dbe9f754eafca1cf5f6
https://doi.org/10.1134/s1063782620140316
https://doi.org/10.1134/s1063782620140316
Autor:
L. E. Vorob’ev, D. V. Denisov, A. G. Gladyshev, M. I. Mitrofanov, Innokenty I. Novikov, D. A. Firsov, V. P. Evtikhiev, D. A. Pashnev, A. V. Babichev, G. V. Voznyuk, Nikita A. Pikhtin, A. Yu. Egorov, L. Ya. Karachinsky
Publikováno v:
Technical Physics Letters. 46:312-315
Single-mode lasing of quantum-cascade lasers with a distributed Bragg reflector formed by ion-beam etching in layers of the upper waveguide cladding is demonstrated. The active region is formed based on an In0.53Ga0.47As/Al0.48In0.52As solid-alloy he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70b4bc221cf6f2abc89d9e8112b3b488
https://doi.org/10.1134/s1063785020040033
https://doi.org/10.1134/s1063785020040033
Autor:
K. M. Morozov, I. V. Levitskii, M. A. Kaliteevski, A. V. Belonovskii, S. N. Rodin, V. P. Evtikhiev, Elizaveta I. Girshova, Konstantin A. Ivanov, Galia Pozina, M. I. Mitrofanov
Publikováno v:
Semiconductors. 54:127-130
The GaN planar hexagonal microcavities are grown by the selective vapor-phase epitaxy technique. The spectra are measured by the low-temperature cathodoluminescence method using a scanning electron microscope. The obtained spectra show a huge Rabi sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d33f49132869d0ab1146dacdaee50fb
https://doi.org/10.1134/s1063782620010042
https://doi.org/10.1134/s1063782620010042
Autor:
S. N. Rodin, A. V. Sakharov, G. V. Voznyuk, M. A. Kaliteevskii, A. F. Tsatsul’nikov, V. P. Evtikhiev, I. V. Levitskii, S. O. Usov, M. I. Mitrofanov, W. V. Lundin
Publikováno v:
Semiconductors. 53:2121-2124
The effect of annealing temperature and time on the luminescence intensity of the InGaN/GaN heterostructure subjected to ion beam etching was studied. We show that annealing at a temperature of 1100°C makes it possible to eliminate the radiation def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a50b1c58de65f4e6dbae1c7342d1ef2
https://doi.org/10.1134/s106378261912025x
https://doi.org/10.1134/s106378261912025x
Autor:
Mikhail V. Maximov, A. A. Serin, G. V. Voznyuk, A. S. Payusov, M. I. Mitrofanov, M. M. Kulagina, G. O. Kornyshov, N. Yu. Gordeev, V. P. Evtikhiev
Publikováno v:
Semiconductors. 54:1811-1813
We present an approach for the treatment of coupled-ridge lasers using focused ion beam (FIB) etching. We show experimentally that the FIB etching allows post-processing lateral mode tuning without deterioration of the main laser parameters.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fdbf7688246b0e32b5970470ad3263c
https://doi.org/10.1134/s1063782620140237
https://doi.org/10.1134/s1063782620140237
Autor:
V. P. Evtikhiev, M. I. Mitrofanov, A. F. Tsatsul’nikov, W. V. Lundin, G. V. Voznyuk, M. A. Kaliteevski, S. N. Rodin
Publikováno v:
Semiconductors. 54:1682-1684
A new approach for calculating the ion dose spatial distribution of the focused ion beam is proposed. The approach is based on the analysis of the secondary electron microscopy image of the area irradiated by the focused ion beam.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fae3f811030fc2e6ccf8c1d9f597dab
https://doi.org/10.1134/s1063782620120246
https://doi.org/10.1134/s1063782620120246
GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography
Autor:
S. O. Usov, A. F. Tsatsul’nikov, V. P. Evtikhiev, I. V. Levitskii, A. V. Sakharov, M. A. Kaliteevski, S. N. Rodin, M. I. Mitrofanov, W. V. Lundin
Publikováno v:
Physics of the Solid State. 61:2335-2337
A significant difference in the growth mechanism of spatially closed structures of gallium nitride during selective growth in submicron windows with and without penetration into the GaN sublayer was demonstrated. The mechanisms of generation and deve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61a1fa7f626864db5ac09c9a227cee54
https://doi.org/10.1134/s106378341912045x
https://doi.org/10.1134/s106378341912045x